| No. | Partie # | Fabricant | Description | Fiche Technique |
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NEC |
0.01 to 3.0 GHz SPDT SWITCH • Switch control voltage • Low insertion loss • High isolation • Handling power : Vcont (H) = 1.8 to 5.3 V (2.7 V TYP.) : Vcont (L) = −0.2 to +0.2 V (0 V TYP.) : Lins = 0.40 dB TYP. @ f = 1.0 GHz, Vcont (H) = 2.7 V, Vcont (L) = 0 V : Lins = 0.47 dB T |
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NEC |
L-BAND PA DRIVER AMPLIFIER • Operation frequency • Supply voltage • Circuit current • Power gain • Gain control range • Low distortion : fopt = 1 429 to 1 453 MHz (1 441 MHz TYP.) : VDD1 = 2.7 to 3.3 V (3.0 V TYP.) : VDD2 = 2.7 to 4.2 V (3.5 V TYP.) : IDD = 28 mA TYP. @ VDD1 = |
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NEC |
L-BAND 4 W SINGLE CONTROL HIGH POWER SPDT SWITCH • Low insertion loss : LINS = 0.45 dB TYP. @ Vcont = +2.6 V/0 V, f = 1.0 GHz, IN-OUT1 : LINS = 0.35 dB TYP. @ Vcont = +2.6 V/0 V, f = 1.0 GHz, IN-OUT2 : LINS = 0.45 dB TYP. @ Vcont = +2.6 V/0 V, f = 2.0 GHz, IN-OUT1/2 • High power switching : Pin (0. |
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NEC |
4 W HIGH POWER SP4T SWITCH • Supply voltage : Vbat = 2.9 to 3.2 V (3.0 V TYP.) • Standby mode voltage : VDD (H) = 1.7 to Vbat V (2.65 V TYP.) : VDD (L) = 0 to +0.05 V (0 V TYP.) • Switch control voltage : Vcont (H) = 1.7 to Vbat V (2.65 V TYP.) : Vcont (L) = 0 to +0.05 |
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NEC |
L-BAND SPDT SWITCH • Maximum transmission power : • Low insertion loss • High switching speed • +3 V/0 V control voltage • Small package : 8 pins SSOP : : 0.6 W (typ.) 0.6 dB (typ.) at f = 2 GHz 30 ns APPLICATION • Digital cordless telephone : PHS, PCS, DECT etc. • Di |
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NEC |
L-BAND SPDT SWITCH • Maximum transmission power : • Low insertion loss • High switching speed • Small package : : : 0.25 W (typ.) 0.6 dB (typ.) at f = 2 GHz 10 ns 8 pins SSOP APPLICATION • Digital cordless telephone : PHS, PCS, DECT etc. • Digital hand-held cellular p |
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NEC |
L-BAND DPDT MMIC SWITCH { High-Power Switching : Pin(1 dB) = +34 dBm typ. @ANT1, 2-TX, VDD = 3.0 V, VCONT = 3.6 V, f = 100 M to 2 GHz Pin(0.5 dB) = +36 dBm typ. @ANT1, 2-TX, VDD = 5.0 V, VCONT = 5.0 V, f = 100 M to 2 GHz { Low Insertion Loss : Lins1 = 0.70 dB typ. @ANT1, 2- |
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NEC |
L-BAND SPDT SWITCH • Low Insertion Loss : LINS = 0.75 dB TYP. @VCONT = +3.0 V/0 V, f = 2 GHz • High Linearity Switching: Pin (1 dB) = +34 dBm TYP. @VCONT = +3.0 V/0 V, f = 2 GHz • Small 6-pin super minimold package (Size: 2.0 × 1.25 × 0.9 mm) APPLICATIONS • L, S-band |
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NEC |
L-BAND PA DRIVER AMPLIFIER { Low Operation Voltage : VDD = 2.8 V { Low distortion : Padj 1 = –60 dBc typ. @ VDD = 2.8 V, fRF = 925 to 960 MHz, Pout = +9 dBm External output matching { Low operation Current : IDD = 25 mA typ. @ VDD = 2.8 V, fRF = 925 to 960 MHz, Pout = +9 dBm E |
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NEC |
L-Band PA DRIVER AMPLIFIER • Low Operation Voltage: VDD1 = VDD2 = 3.0 V • fRF: 925 to 960 MHz@ Pout = +9 dBm • Low distortion: Padj1 = –60 dBc typ. @ VDD = 3.0 V, Pout = +9 dBm, VAGC = 2.5 V External input and output matching • Low operation Current: IDD = 20 mA typ. @ VDD = 3 |
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NEC |
GaAs MMIC DBS Twin IF Switch • Two Independent IF Channels • Integral Switching to Channel Input to Either Channel Output • Insertion Loss Per Channel • Frequency Range : 5.0 dB TYP. (ZO = 50 Ω) : 950 MHz to 2 150 MHz • Channel to Channel Isolation : 33 dB TYP. • Small 16-pin H |
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NEC |
GaAs MMIC SPDT SWITCH • Operating frequency • Low insertion loss • Handling power • High isolation • Input/output return loss : f = 2.4 to 2.5 GHz and 4.9 to 6.0 GHz : LINS = 0.4 dB TYP. @ f = 2.4 to 2.5 GHz : LINS = 0.5 dB TYP. @ f = 4.9 to 6.0 GHz : Pin (1 dB) = +31 dBm |
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NEC |
L-BAND SP3T SWITCH • Low insertion loss • High isolation • High power : Lins = 0.45 dB TYP. @ f = 1.0 GHz, Vcont (H) = 2.8 V, Vcont (L) = 0 V : Lins = 0.55 dB TYP. @ f = 2.0 GHz, Vcont (H) = 2.8 V, Vcont (L) = 0 V : ISL = 21 dB TYP. @ f = 2.0 GHz, Vcont (H) = 2.8 V, Vc |
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NEC |
1 W SP3T SWITCH • Low insertion loss : Lins = 0.45 dB TYP. @ f = 1.0 GHz, Vcont (H) = 2.8 V, Vcont (L) = 0 V : Lins = 0.55 dB TYP. @ f = 2.0 GHz, Vcont (H) = 2.8 V, Vcont (L) = 0 V : Lins = 0.60 dB TYP. @ f = 2.5 GHz, Vcont (H) = 2.8 V, Vcont (L) = 0 V • High isolat |
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NEC |
0.01 to 3.0 GHz SPDT SWITCH • Switch control voltage • Low insertion loss • High isolation • Handling power : Vcont (H) = 1.8 to 5.3 V (2.7 V TYP.) : Vcont (L) = −0.2 to +0.2 V (0 V TYP.) : Lins = 0.40 dB TYP. @ f = 1.0 GHz, Vcont (H) = 2.7 V, Vcont (L) = 0 V : Lins = 0.47 dB T |
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NEC |
0.05 to 3.0 GHz SPDT SWITCH • Switch control voltage • Low insertion loss • High isolation • Handling power : Vcont (H) = 3.0 V TYP. : Vcont (L) = 0 V TYP. : Lins = 0.40 dB TYP. @ f = 1.0 GHz : Lins = 0.50 dB TYP. @ f = 2.5 GHz : ISL = 27 dB TYP. @ f = 1.0 GHz : ISL = 18 dB TYP |
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NEC |
WIDE-BAND AMPLIFIER • Wide band : f = 50 MHz to 3 GHz ORDERING INFORMATION PART NUMBER FORM chip chip PPG100P PPG101P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) PPG100P Drain Voltage Gate Voltage Input Voltage Input Power Total Power Dissipation Operating Temperature Stor |
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NEC |
WIDE-BAND AMPLIFIER • Ultra wide band : f = 50 MHz to 3 GHz • Input/output impedance matched to 50 Ω • Hermetic sealed ceramic package assures high reliability ORDERING INFORMATION PART NUMBER PACKAGE T-31, 8 PIN CERAMIC µPG103B ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) |
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NEC |
L-BAND SPDT SWITCH • Maximum transmission power : +35 dBm min. (@ VCONT = +5 V/0 V) +34 dBm typ. (@ VCONT = +3 V/0 V) • Low insertion loss : 0.55 dB typ. (@ 1 GHz) 0.65 dB typ. (@ 2 GHz) APPLICATION • Digital Cellular : GSM, PDC, PCN etc. • PHS Base Station, PCS etc. |
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NEC |
L-BAND SPDT SWITCH • Maximum transmission power : +35 dBm min. (@ VCONT = ð5 V/0 V: PPG138GV) +34 dBm typ. (@ VCONT = ð3 V/0 V: PPG138GV) • Low insertion loss : 0.55 dB typ. (@ 1 GHz) 0.65 dB typ. (@ 2 GHz) APPLICATION • Digital Cellular : GSM, PDC, PCN etc. • PHS Bas |
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