| No. | Partie # | Fabricant | Description | Fiche Technique |
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NEC Electronics |
(NE9000/1/2 Series) Ku-Band Medium Power GaAs MESFET |
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NEC |
NPN SILICON OSCILLATOR AND MIXER TRANSISTOR • LOW COST • HIGH GAIN BANDWIDTH PRODUCT: fT = 2000 MHz TYP • LOW COLLECTOR TO BASE TIME CONSTANT: CC •r b'b = 5 ps TYP • LOW FEEDBACK CAPACITANCE: CRE= 0.55 pF TYP NE944 SERIES DESCRIPTION The NE944 series of NPN silicon epitaxial bipolar transisto |
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NEC |
NPN SILICON OSCILLATOR AND MIXER TRANSISTOR • LOW COST • HIGH GAIN BANDWIDTH PRODUCT: fT = 2000 MHz TYP • LOW COLLECTOR TO BASE TIME CONSTANT: CC •r b'b = 5 ps TYP • LOW FEEDBACK CAPACITANCE: CRE= 0.55 pF TYP NE944 SERIES DESCRIPTION The NE944 series of NPN silicon epitaxial bipolar transisto |
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NEC |
0.2 W X / Ku-BAND POWER GaAs MES FET • High Output Power • High Linear Gain : Po (1 dB) = +25.0 dBm TYP. : 10.0 dB TYP. • High Power Added Efficiency: 35 % TYP. @V DS = 9 V, IDset = 90 mA, f = 14.5 GHz ORDERING INFORMATION Part Number NE960R200 NE961R200 NE960R275 75 Package 00 (CHIP) |
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NEC |
0.2 W X / Ku-BAND POWER GaAs MES FET • High Output Power • High Linear Gain : Po (1 dB) = +25.0 dBm TYP. : 10.0 dB TYP. • High Power Added Efficiency: 35 % TYP. @V DS = 9 V, IDset = 90 mA, f = 14.5 GHz ORDERING INFORMATION Part Number NE960R200 NE961R200 NE960R275 75 Package 00 (CHIP) |
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NEC |
0.5 W X / Ku-BAND POWER GaAs MES FET • High Output Power • High Linear Gain : Po (1 dB) = +27.5 dBm TYP. : 9.0 dB TYP. • High Power Added Efficiency: 30 % TYP. @V DS = 9 V, IDset = 180 mA, f = 14.5 GHz ORDERING INFORMATION Part Number NE960R500 NE961R500 NE960R575 NE962R575 75 Package |
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NEC |
0.5 W X / Ku-BAND POWER GaAs MES FET • High Output Power • High Linear Gain : Po (1 dB) = +27.5 dBm TYP. : 9.0 dB TYP. • High Power Added Efficiency: 30 % TYP. @V DS = 9 V, IDset = 180 mA, f = 14.5 GHz ORDERING INFORMATION Part Number NE960R500 NE961R500 NE960R575 NE962R575 75 Package |
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NEC |
0.5 W X / Ku-BAND POWER GaAs MES FET • High Output Power • High Linear Gain : Po (1 dB) = +27.5 dBm TYP. : 9.0 dB TYP. • High Power Added Efficiency: 30 % TYP. @V DS = 9 V, IDset = 180 mA, f = 14.5 GHz ORDERING INFORMATION Part Number NE960R500 NE961R500 NE960R575 NE962R575 75 Package |
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NEC |
0.2 W X / Ku-BAND POWER GaAs MES FET • High Output Power • High Linear Gain : Po (1 dB) = +25.0 dBm TYP. : 10.0 dB TYP. • High Power Added Efficiency: 35 % TYP. @V DS = 9 V, IDset = 90 mA, f = 14.5 GHz ORDERING INFORMATION Part Number NE960R200 NE961R200 NE960R275 75 Package 00 (CHIP) |
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NEC |
0.5 W X / Ku-BAND POWER GaAs MES FET • High Output Power • High Linear Gain : Po (1 dB) = +27.5 dBm TYP. : 9.0 dB TYP. • High Power Added Efficiency: 30 % TYP. @V DS = 9 V, IDset = 180 mA, f = 14.5 GHz ORDERING INFORMATION Part Number NE960R500 NE961R500 NE960R575 NE962R575 75 Package |
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NEC |
0.5 W X / Ku-BAND POWER GaAs MES FET • High Output Power • High Linear Gain : Po (1 dB) = +27.5 dBm TYP. : 9.0 dB TYP. • High Power Added Efficiency: 30 % TYP. @V DS = 9 V, IDset = 180 mA, f = 14.5 GHz ORDERING INFORMATION Part Number NE960R500 NE961R500 NE960R575 NE962R575 75 Package |
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NEC |
PNP SILICON HIGH FREQUENCY TRANSISTOR • HIGH GAIN BANDWIDTH PRODUCT: fT = 5.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE02133 • HIGH INSERTION POWER GAIN: |S21E|2 = 10 dB at 1 GHz NE97833 33 (SOT 23 STYLE) DESCRIPTION The NE97833 PNP silicon transist |
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NEC Electronics |
(NE9000/1/2 Series) Ku-Band Medium Power GaAs MESFET |
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NEC Electronics |
(NE9000/1/2 Series) Ku-Band Medium Power GaAs MESFET |
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NEC Electronics |
(NE9000/1/2 Series) Ku-Band Medium Power GaAs MESFET |
|
|
|
|
NEC |
NPN SILICON OSCILLATOR AND MIXER TRANSISTOR • LOW COST • HIGH GAIN BANDWIDTH PRODUCT: fT = 2000 MHz TYP • LOW COLLECTOR TO BASE TIME CONSTANT: CC •r b'b = 5 ps TYP • LOW FEEDBACK CAPACITANCE: CRE= 0.55 pF TYP NE944 SERIES DESCRIPTION The NE944 series of NPN silicon epitaxial bipolar transisto |
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|
|
|
NEC |
0.2 W X / Ku-BAND POWER GaAs MES FET • High Output Power • High Linear Gain : Po (1 dB) = +25.0 dBm TYP. : 10.0 dB TYP. • High Power Added Efficiency: 35 % TYP. @V DS = 9 V, IDset = 90 mA, f = 14.5 GHz ORDERING INFORMATION Part Number NE960R200 NE961R200 NE960R275 75 Package 00 (CHIP) |
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