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NEC |
2SC2785 |
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NEC |
NPN SILICON TRANSISTOR |
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NEC |
GENERAL PURPOSE L-BAND DOWN CONVERTER • Wide band operation fRF = 0.9 to 2.0 GHz • Two products in IF output variation are prepared µPC2721: Emitter follower output type = 50 Ω constant resistive impedance µPC2722: Open collector output type = High impedance output dependent on external |
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NEC |
2SC2784 |
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NEC |
NPN SILICON TRANSISTOR |
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NEC |
NPN Silicon Transistor |
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NEC |
NPN SILICON TRANSISTOR |
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NEC Electronics |
Transistors |
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NEC |
NPN Silicon Transistor • Complementary transistor with 2SA1154 • High PT in small dimension and high voltage PT = 1 W, VCEO = 60 V ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Collector to base voltage Collector to emitter voltage Emitter to base voltage Colle |
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NEC |
2SC2721 • Complementary transistor with 2SA1154 • High PT in small dimension and high voltage PT = 1 W, VCEO = 60 V ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Collector to base voltage Collector to emitter voltage Emitter to base voltage Colle |
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NEC |
NPN Silicon Transistor |
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NEC |
SILICON MMIC L-BAND DOWN CONVERTER • WIDE BAND OPERATION UP TO 2.5 GHz • INTERNAL BALANCED AMPLIFIER FOR VCO • SINGLE ENDED PUSH-PULL IF AMPLIFIER • 5 V SINGLE SUPPLY VOLTAGE: ICC = 30 to 35 mA • LOW CURRENT DISSIPATION • TAPE AND REEL PACKAGING OPTION AVAILABLE OSC base (feedback) 2 |
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NEC |
3 V/ 1900 MHz LOW NOISE SI MMIC AMPLIFIER • 16 dB GAIN WITH 4 dB NOISE FIGURE AT 1900 MHz • LOW VOLTAGE - LOW CURRENT: 6 mA at 3 V • LOW POWER CONSUMPTION: 18 mW TYP • SUPER SMALL PACKAGE Gain, GS (dB) 18 UPC2749T NOISE FIGURE AND GAIN vs. FREQUENCY VCC = 3.0 V 4.5 • TAPE AND REEL PACKAGI |
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NEC |
TFT COLOR LCD |
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NEC |
NPN Silicon Transistor |
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NEC |
3 V/ 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS • 7 dBm P1dB TYPICAL AT 1.9 GHz • LOW VOLTAGE: 3 Volts • WIDE BANDWIDTH: 2.9 GHz at -3 dB (UPC2762T) Gain, GS (dB) 24 22 UPC2763T 20 18 16 14 UPC2762T 12 UPC2762T UPC2763T GAIN vs. FREQUENCY VCC = 3.0 V, ICC = 27 mA • HIGH GAIN: 20 dB at 1.9 GHz ( |
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NEC |
3 V/ 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER • High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) • Supply voltage • Medium output power : VCC = 2.7 to 3.3 V : µPC2762TB: PO(1 dB) = +8.0 dBm TYP. @ 0.9 GHz µPC2763TB: PO(1 dB) = +9.5 dBm TYP. @ 0.9 GHz µPC2771TB: |
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NEC |
3 V/ 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS • 7 dBm P1dB TYPICAL AT 1.9 GHz • LOW VOLTAGE: 3 Volts • WIDE BANDWIDTH: 2.9 GHz at -3 dB (UPC2762T) Gain, GS (dB) 24 22 UPC2763T 20 18 16 14 UPC2762T 12 UPC2762T UPC2763T GAIN vs. FREQUENCY VCC = 3.0 V, ICC = 27 mA • HIGH GAIN: 20 dB at 1.9 GHz ( |
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NEC |
3 V/ 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS • HIGH GAIN: 20 dB at 900 to 1500 MHz Typical • HIGH OUTPUT POWER: PSAT = +12.5 dBm at 900 MHz +11 dBm at 1500 MHz Gain, GS (dB) UPC2771T GAIN vs. FREQUENCY AND TEMPERATURE 24 TA = -40˚ C 22 • LOW BIAS VOLTAGE: 3.0 V Typical, 2.7 V Minimum • SUPER |
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NEC |
UPC271 |
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