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2SA1742 a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. FEATURES • Hig |
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SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE • Dual chip type • Low on-resistance RDS(on)1 = 47.0 mΩ MAX. (VGS = 10 V, ID = 2.3 A) RDS(on)2 = 57.0 mΩ MAX. (VGS = 4.5 V, ID = 2.3 A) RDS(on)3 = 66.0 mΩ MAX. (VGS = 4.0 V, ID = 2.3 A) • Low input capacitance Ciss = 870 pF TYP. • Built-in G-S protec |
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PNP Transistor a high hFE at Low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. PACKAGE DRAWIN |
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2SA1744 a high hFE at Low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. PACKAGE DRAWIN |
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SWITCHING N-CHANNEL POWER MOSFET • 2.5-V gate drive and low on-resistance 1.44 RDS(on)1 = 13 mΩ MAX. (VGS = 4.0 V, ID = 5.0 A) 1.8 MAX. 1 5.37 MAX. 4 6.0 ±0.3 4.4 +0.10 –0.05 RDS(on)2 = 16 mΩ MAX. (VGS = 2.5 V, ID = 5.0 A) • Low Ciss : Ciss = 2700 pF TYP. • Built-in G-S protect |
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SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE • Low on-resistance RDS(on)1 = 8.5 mΩ TYP. (VGS = –10 V, ID = –6.0 A) RDS(on)2 = 11.0 mΩ TYP. (VGS = –4.5 V, ID = –6.0 A) RDS(on)3 = 12.0 mΩ TYP. (VGS = –4.0 V, ID = –6.0 A) • Low Ciss : Ciss = 3800 pF TYP. • Built-in G-S protection diode • Small and |
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SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE • Low on-resistance RDS(on)1 = 12.5 mΩ TYP. (VGS = –10 V, ID = –4 A) RDS(on)2 = 17.0 mΩ TYP. (VGS = –4.5 V, ID = –4 A) RDS(on)3 = 19.0 mΩ TYP. (VGS = –4.0 V, ID = –4 A) • Low Ciss : Ciss = 2100 pF TYP. • Built-in G-S protection diode • Small and surf |
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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE • 2.5-V gate drive and low on-resistance 1.8 MAX. • Built-in G-S protection diode • Small and surface mount package (Power SOP8) 0.05 MIN. • Low Ciss : Ciss = 950 pF TYP. 0.15 • RDS(on)3 = 30.0 mΩ MAX. (VGS = 2.5 V, ID = 3.5 A) +0.10 –0.05 • |
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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE • Single chip type • Low On-state Resistance 1.44 5 5 5 5 RDS(on)1 = 14 mΩ (TYP.) (VGS = 10 V, ID = 5.0 A) RDS(on)2 = 17 mΩ (TYP.) (VGS = 4.5 V, ID = 5.0 A) RDS(on)3 = 19 mΩ (TYP.) (VGS = 4.0 V, ID = 5.0 A) • Low Ciss : Ciss = 2400 pF (TYP.) • Buil |
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SWITCHING N-AND P-CHANNEL POWER MOS FET INDUSTRIAL USE • Dual chip type • Low on-resistance N-Channel RDS(on)1 = 0.12 Ω TYP. (VGS = 10 V, ID = 0.5 A) 1.44 1.8 MAX. 1 5.37 MAX. +0.10 –0.05 P-Channel 4 6.0 ±0.3 4.4 0.8 RDS(on)2 = 0.19 Ω TYP. (VGS = 4 V, ID = 0.5 A) P-Channel RDS(on)1 = 0.45 Ω TYP. (VGS |
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SWITCHING N-CHANNEL POWER MOSFET • Low On-Resistance RDS(on)1 = 27 mΩ Max. (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 50 mΩ Max. (VGS = 4 V, ID = 3.5 A) • Low Input Capacitance 1.44 1.8 MAX. 1 5.37 MAX. +0.10 –0.05 1, 2, 3 ; Source ; Gate 4 5, 6, 7, 8 ; Drain 4 6.0 ±0.3 4.4 0.8 Ciss = |
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SWITCHING N-CHANNEL POWER MOSFET • 2.5 V gate drive and low on-resistance RDS(on)1 = 27 mΩ (MAX.) (VGS = 4.0 V, ID = 3.5 A) 1.44 RDS(on)2 = 40 mΩ (MAX.) (VGS = 2.5 V, ID = 3.5 A) • Low Ciss : Ciss = 1040 pF (TYP.) • Built-in G-S protection diode • Small and surface mount package (P |
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SWITCHING N-CHANNEL POWER MOSFET • Super Low On-Resistance RDS(on)1 = 10.5 mΩ RDS(on)2 = 17 mΩ • Low Ciss MAX. (VGS = 10 V, ID = 5.0 A) MAX. (VGS = 4 V, ID = 5.0 A) 1 4 5.37 MAX. +0.10 –0.05 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain Ciss = 2180 pF TYP. 1.44 1.8 MAX. 6.0 ±0.3 4 |
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N-Channel Power MOSFET • Super low on-state resistance 1.44 RDS(on)1 = 19.0 mΩ TYP. (VGS = 10 V, ID = 4.0 A) 1.8 Max. 1 5.37 Max. 4 6.0 ±0.3 4.4 +0.10 –0.05 0.8 RDS(on)2 = 30.0 mΩ TYP. (VGS = 4.5 V, ID = 4.0 A) • Low Ciss : Ciss = 750 pF TYP. • Built-in G-S protectio |
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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE • Super Low on-resistance RDS(on)1 = 5.8 mΩ (TYP.) (VGS = 10 V, ID = 7.0 A) 1.44 1 5.37 MAX. +0.10 –0.05 4 6.0 ±0.3 4.4 0.8 RDS(on)2 = 7.0 mΩ (TYP.) (VGS = 4.5 V, ID = 7.0 A) RDS(on)3 = 8.0 mΩ (TYP.) (VGS = 4.0 V, ID = 7.0 A) • Low Ciss : Ciss = 3 |
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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE • Low on-resistance RDS(on)1 = 10.0 mΩ (TYP.) (VGS = 10 V, ID = 5.0 A) 1.44 RDS(on)2 = 12.5 mΩ (TYP.) (VGS = 4.5 V, ID = 5.0 A) 1.8 MAX. 1 5.37 MAX. 4 6.0 ±0.3 4.4 +0.10 –0.05 0.8 RDS(on)3 = 14.0 mΩ (TYP.) (VGS = 4.0 V, ID = 5.0 A) • Low Ciss: |
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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE • Low on-resistance RDS(on)1 = 18.0 mΩ (TYP.) (VGS = 10 V, ID = 3.5 A) 1.44 1 5.37 MAX. +0.10 –0.05 4 6.0 ±0.3 4.4 0.8 RDS(on)2 = 28.0 mΩ (TYP.) (VGS = 4.5 V, ID = 3.5 A) • Low Ciss : Ciss = 730 pF (TYP.) • Built-in G-S protection diode • Small an |
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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE • Low on-resistance RDS(on)1 = 9.3 mΩ (TYP.) (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 13.8 mΩ (TYP.) (VGS = 4.5 V, ID = 4.5 A) • Low Ciss : Ciss = 1850 pF (TYP.) • Built-in G-S protection diode • Small and surface mount package (Power SOP8) PACKAGE DRAWI |
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SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE • Low on-state resistance RDS(on)1 = 33 mΩ MAX. (VGS = −10 V, ID = −3 A) 1.44 RDS(on)2 = 59 mΩ MAX. (VGS = −4.5 V, ID = −3 A) 1.8 MAX. 1 5.37 MAX. 4 6.0 ±0.3 4.4 +0.10 –0.05 • Low Ciss : Ciss = 830 pF TYP. • Built-in G-S protection diode • Small |
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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE • Low on-resistance 1.8 MAX. • Small and surface mount package (Power SOP8) 0.05 MIN. • Built-in G-S protection diode 0.15 • Low Ciss: Ciss = 980 pF TYP. +0.10 –0.05 • • • RDS(on)1 = 21.0 mΩ MAX. (VGS = 10 V, ID = 4.5 A) 1.44 RDS(on)2 = 29. |
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