| No. | Partie # | Fabricant | Description | Fiche Technique |
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NEC |
2SA992 |
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NEC |
PNP SILICON TRANSISTOR • High hFE and Excellent Linearity: 200 TYP. hFE (VCE = −6.0 V, IC = −1.0 mA) ABSOLUTE MAXIMUM RATINGS Maximum Temperature Storage Temperature Junction Temperature Maximum Power Dissipations (TA = 25°C) Total Power Dissipation −55 to +150°C +150° |
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NEC |
PNP SILICON TRANSISTOR The 2SA992 is best for use as the middle range amplifier in Hi-Fi stereo control amplifiers; power amplifiers, and etc. • High Voltage. VCEO : -120 V • Low Output Capacitance. Cob : 2.0 pF TYP. (VCB =-30 V) • High hFE. hFE : 500 TYP. (VCE =-6. |
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NEC |
PNP SILICON POWER TRANSISTOR |
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NEC |
PNP Silicon Transistor |
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NEC |
2SA988 |
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NEC |
2SA1385-Z |
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NEC |
2SA1645 a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for highcurrent switching. FE |
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NEC |
PNP SILICON TRIPLE DIFFUSED TRANSISTOR |
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NEC |
PNP SILICON TRANSISTOR |
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NEC |
PNP SILICON TRANSISTOR |
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NEC |
2SA1009 |
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NEC |
PNP Transistor |
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NEC |
PNP SILICON TRANSISTOR |
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NEC Electronics |
2SA1458 |
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NEC |
2SA952 |
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NEC |
2SA953 |
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NEC |
PNP SILICON TRANSISTOR |
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NEC |
PNP SILICON TRIPLE DIFFUSED TRANSISTOR • New package with dimensions in between those of small signal and power signal package • High voltage • Fast switching speed • Complementary transistor with 2SC4942 QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devi |
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NEC |
2SA1175 |
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