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Bruckewell |
P-Channel Enhancement Mode Power MOSFET ● VDS = -20V,ID = -2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V D G S Schematic diagram ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Marking and pin assignment Application ● P |
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Rectron |
P-Channel Enhancement Mode Power MOSFET VDS = -30V,ID = -4.2A RDS(ON) < 130mΩ @ VGS=-2.5V RDS(ON) < 75mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V High power and current handing capability Lead free product is acquired Surface mount package Application PWM applications Load switch Power manage |
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DK |
High-performance switching power supply controller · 85V—265V wide range AC power input. · 65KHz Oscillation Frequency. · Double chip design with Bipolar Junction Transistor (BJT) to save cost. · Large scale MOS digital circuit design with E pole BJT driving, so that to enhance its High Voltage Resis |
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Microne |
High-Performance Current Mode PWM Switching Power Controller protection ME8115 Power manage Driver Unit VCC 2 OC 8 Q1 7 OC OE 1 OB Q2 5KΩ GND 3 Current limit 9.9V over protection 0.65V Foreland hide IS 6 20Ω V08 www.microne.com.cn Page 5 of 15 ，VCC 18 VCC+0.3 OC -0.3-700 800 |
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Feihonltd |
N-channel enhancement mode power MOS FET |
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Rafael Microelectronics |
High Performance Low Power Advanced Digital TV Silicon Tuner e schematic Vincent Huang 2011/11/16 1.2 Modify reference schematic Vincent Huang 2011/11/30 © 2011 by Rafael Microelectronics, Inc. All Rights Reserved. Information in this document is provided in connection with Rafael Microelectronics, Inc. |
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NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET ● VDS =85V,ID =160A RDS(ON) <3.8mΩ @ VGS=10V ● Excellent gate charge x RDS(on) product ● Very low on-resistance RDS(on) ● 175 °C operating temperature ● Pb-free lead plating ● 100% UIS tested Schematic diagram Marking and pin assignment Application |
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Ruichips |
N-Channel Advanced Power MOSFET • 70V/80A, RDS (ON) =6.5mΩ (Type) VGS=10V IDS=40A • Ultra Low On-Resistance • Exceptional dv/dt capability • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Available Pin Descripti |
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NCE Power Semiconductor |
N & P-Channel Enhancement Mode Power MOSFET ● N-Channel VDS = 60V,ID =6.3A RDS(ON) < 30mΩ @ VGS=10V N-channel P-channel Schematic diagram ● P-Channel VDS = -60V,ID = -6A RDS(ON) < 80mΩ @ VGS=-10V ● High power and current handing capability ● Lead free product is acquired ● Surface mount pa |
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NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET ● VDS = 82V,ID =90A RDS(ON) < 8.5mΩ @ VGS=10V (Typ:7.5mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with h |
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On-Bright Electronics |
High Performance Current Mode PWM Power Switch including Cycle- by-Cycle current limiting (OCP), over load protection (OLP), over temperature protection (OTP), over voltage protection and VDD under voltage lockout (UVLO). Excellent EMI performance is achieved with On-Bright proprietary fre |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET rage Temperature Range Operating Junction Temperature Range 320 8 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.0 62 Unit ℃/W ℃/W 200430071-1 |
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ROUM |
20A 600V N-channel Enhancement Mode Power MOSFET ● Fast Switching ● Low On Resistance(Rdson≤0.45Ω) ● Low Gate Charge(Typical:61nC) ● Low Reverse Transfer Capacitances(Typical:20pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Application ● Used in various power switching circuit for |
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NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET ● VDS =150V,ID =140A RDS(ON) <6.2mΩ @ VGS=10V ● Excellent gate charge x RDS(on) product(FOM) ● Very low on-resistance RDS(on) ● 175 °C operating temperature ● Pb-free lead plating ● 100% UIS tested Application ● DC/DC Converter ● Ideal for high-frequ |
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NCE Power |
NCE N-Channel Enhancement Mode Power MOSFET ● VDS =85V,ID =80A RDS(ON) < 8.5mΩ @ VGS=10V (Typ:6.8mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Special designed for convertors and power controls ● Good stability and uniformity with hi |
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Advanced Power Electronics |
AP85T03GP |
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Rectron |
N-Channel Enhancement Mode Power MOSFET ƽ VDS =30V,ID =80A RDS(ON) <6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V ƽ High density cell design for ultra low Rdson ƽ Fully characterized avalanche voltage and current ƽ Good stability and uniformity with high EAS ƽ Excellent package for good heat dis |
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Vanguard Semiconductor |
P-Channel Advanced Power MOSFET P-Channel Enhancement mode Fast Switching Pb-free lead plating; RoHS compliant; Halogen free V DS R DS(on),TYP @VGS=-4.5V R DS(on),TYP @VGS=-3.3V R DS(on),TYP @VGS=-2.5V ID -20 V 86 mΩ 94 mΩ 106 mΩ -3 A SOT23 Part ID V2301BC-A P |
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On-Bright Electronics |
High Performance QR mode Primary-Side Power Switch Primary-side sensing and regulation operates in QR mode without TL431 and opto-coupler High precision constant voltage and current regulation at universal AC input Programmable CV and CC regulation Integrated power MOSFET Good dynamic respo |
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KODENSHI KOREA |
Advanced N-Ch Power MOSFET High Voltage : BVDSS=650V(Min.) Low Crss : Crss=5.6pF(Typ.) Low gate charge : Qg=11.2nC(Typ.) Low RDS(on) : RDS(on)=3.0Ω(Max.) G Package Code TO-252 S TO-252 S Type No. SMK0465D Marking SMK0465 PIN Connection D D G Ordering Information Ma |
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