NAiS AQV fiche technique

No.	Partie #	Fabricant	Description
1	AQV454A	NAiS	Photo MOS Relay 1. Form B (Normally-closed) type Has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. Cross section of the normally-closed type of power MOS Passivation membrane So
2	AQV234AX	NAiS	PhotoMOS RELAYS 1. High sensitivity type LED operate current: typical 0.31 mA 2. Low-level off state leakage current (Typical 1 µA at 400 V load voltage) 3. Eliminates the need for a power supply to drive the power MOSFET 4. Low thermal electromotive force (Approx.
3	AQV214EA	NAiS	PhotoMOS RELAY 1. Controls low-level analog signals 6. Stable on resistance 8.8±0.05 .346±.002 6.4±0.05 .252±.002 3.9±0.2 .154±.008 PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distor
4	AQV454H	NAiS	Photo MOS Relay 1. Form B (Normally-closed) type Has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. Cross section of the normally-closed type of power MOS Passivation membrane So
5	AQV453	NAiS	Photo MOS Relay 1. Form B (Normally-closed) type Has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. Cross section of the normally-closed type of power MOS Passivation membrane So
6	AQV234A	NAiS	PhotoMOS RELAYS 1. High sensitivity type LED operate current: typical 0.31 mA 2. Low-level off state leakage current (Typical 1 µA at 400 V load voltage) 3. Eliminates the need for a power supply to drive the power MOSFET 4. Low thermal electromotive force (Approx.
7	AQV214E	NAiS	PhotoMOS RELAY 1. Controls low-level analog signals 6. Stable on resistance 8.8±0.05 .346±.002 6.4±0.05 .252±.002 3.9±0.2 .154±.008 PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distor
8	AQV210E	NAiS	PhotoMOS RELAY 1. Controls low-level analog signals 6. Stable on resistance 8.8±0.05 .346±.002 6.4±0.05 .252±.002 3.9±0.2 .154±.008 PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distor
9	AQV210EA	NAiS	PhotoMOS RELAY 1. Controls low-level analog signals 6. Stable on resistance 8.8±0.05 .346±.002 6.4±0.05 .252±.002 3.9±0.2 .154±.008 PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distor
10	AQV454HA	NAiS	Photo MOS Relay 1. Form B (Normally-closed) type Has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. Cross section of the normally-closed type of power MOS Passivation membrane So
11	AQV453A	NAiS	Photo MOS Relay 1. Form B (Normally-closed) type Has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. Cross section of the normally-closed type of power MOS Passivation membrane So
12	AQV454	NAiS	Photo MOS Relay 1. Form B (Normally-closed) type Has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. Cross section of the normally-closed type of power MOS Passivation membrane So
13	AQV234	NAiS	PhotoMOS RELAYS 1. High sensitivity type LED operate current: typical 0.31 mA 2. Low-level off state leakage current (Typical 1 µA at 400 V load voltage) 3. Eliminates the need for a power supply to drive the power MOSFET 4. Low thermal electromotive force (Approx.
14	AQV234AZ	NAiS	PhotoMOS RELAYS 1. High sensitivity type LED operate current: typical 0.31 mA 2. Low-level off state leakage current (Typical 1 µA at 400 V load voltage) 3. Eliminates the need for a power supply to drive the power MOSFET 4. Low thermal electromotive force (Approx.