No. | Partie # | Fabricant | Description | Fiche Technique |
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NAINA SEMICONDUCTOR |
SILICON POWER DIODE • Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current Te=1500C Maximum peak forward voltage drop @ Rated I |
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NAINA SEMICONDUCTOR |
SILICON POWER DIODE • Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current Te=1500C Maximum peak forward voltage drop @ Rated I |
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NAINA SEMICONDUCTOR |
SILICON POWER DIODE • Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current Te=1500C Maximum peak forward voltage drop @ Rated I |
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NAINA SEMICONDUCTOR |
SILICON POWER DIODE • Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current Te=1500C Maximum peak forward voltage drop @ Rated I |
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|
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NAINA SEMICONDUCTOR |
SILICON POWER DIODE • Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current Te=1500C Maximum peak forward voltage drop @ Rated I |
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|
|
NAINA SEMICONDUCTOR |
SILICON POWER DIODE • Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current Te=1500C Maximum peak forward voltage drop @ Rated I |
|
|
|
NAINA SEMICONDUCTOR |
SILICON POWER DIODE • Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current Te=1500C Maximum peak forward voltage drop @ Rated I |
|
|
|
NAINA SEMICONDUCTOR |
SILICON POWER DIODE • Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current Te=1500C Maximum peak forward voltage drop @ Rated I |
|
|
|
NAINA SEMICONDUCTOR |
SILICON POWER DIODE • Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current Te=1500C Maximum peak forward voltage drop @ Rated I |
|
|
|
NAINA SEMICONDUCTOR |
SILICON POWER DIODE • Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current Te=1500C Maximum peak forward voltage drop @ Rated I |
|
|
|
NAINA SEMICONDUCTOR |
SILICON POWER DIODE • Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current Te=1500C Maximum peak forward voltage drop @ Rated I |
|
|
|
NAINA SEMICONDUCTOR |
SILICON POWER DIODE • Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current Te=1500C Maximum peak forward voltage drop @ Rated I |
|
|
|
NAINA SEMICONDUCTOR |
SILICON POWER DIODE • Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current Te=1500C Maximum peak forward voltage drop @ Rated I |
|
|
|
NAINA SEMICONDUCTOR |
SILICON POWER DIODE • Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current Te=1500C Maximum peak forward voltage drop @ Rated I |
|
|
|
NAINA SEMICONDUCTOR |
SILICON POWER DIODE • Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current Te=1500C Maximum peak forward voltage drop @ Rated I |
|
|
|
NAINA SEMICONDUCTOR |
SILICON POWER DIODE • Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current Te=1500C Maximum peak forward voltage drop @ Rated I |
|
|
|
NAINA SEMICONDUCTOR |
SILICON POWER DIODE • Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current Te=1500C Maximum peak forward voltage drop @ Rated I |
|
|
|
NAINA SEMICONDUCTOR |
SILICON POWER DIODE • Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current Te=1500C Maximum peak forward voltage drop @ Rated I |
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