Multicomp 2N4 fiche technique

No.	Partie #	Fabricant	Description
1	2N4870	Multicomp	Unijunction Transistor
2	2N4037	Multicomp	Silicon Transistor high breakdown voltage, low leakage current, low capacity, and beta useful over an extremely wide current range. Maximum Ratings: Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Continuous Collector Current Total
3	2N4235	Multicomp	Bipolar Transistor
4	2N4238	Multicomp	Bipolar Transistor
5	2N4401	Multicomp	General Purpose Switching Transistors • NPN/PNP Silicon Planar Epitaxial Transistors. • General purpose Switching Applications. • 2N 4401 Type NPN. • 2N 4403 Type PNP. 2N4401 NPN 2N4403 PNP TO-92 Dimensions A B C D E F G H K L Minimum 4.32 4.45 3.18 0.41 0.35 1.14 12.70 1.982 Maximu
6	2N4871	Multicomp	Unijunction Transistor
7	2N4032	Multicomp	Power Transistor high breakdown voltage, low leakage current. Low capacity, and beta useful over an extremely wide current range. Pin Configurations: 1. Emitter 2. Base 3. Collector Maximum Ratings: Characteristic Collector-Base Voltage Collector-Emitter Voltage Em
8	2N4234	Multicomp	Bipolar Transistor high breakdown voltage, low leakage current, low capacity, and beta useful over an extremely wide current range. Maximum Ratings: Characteristic Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Continuous Collector Current
9	2N4236	Multicomp	Bipolar Transistor
10	2N4920	Multicomp	Medium Power Transistor • Low Saturation Voltage: VCE(sat) 0.6V DC IC = 1A • Excellent Power Dissipation Due to Thermopad Construction PD = 30 @ TC = 25°C Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Continuou
11	2N4403	Multicomp	General Purpose Switching Transistors • NPN/PNP Silicon Planar Epitaxial Transistors. • General purpose Switching Applications. • 2N 4401 Type NPN. • 2N 4403 Type PNP. 2N4401 NPN 2N4403 PNP TO-92 Dimensions A B C D E F G H K L Minimum 4.32 4.45 3.18 0.41 0.35 1.14 12.70 1.982 Maximu