| No. | Partie # | Fabricant | Description | Fiche Technique |
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Multicomp |
NPN Transistor • NPN silicon planar switching transistors. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. • General purpose switching and amplifier applications. TO-92 Plastic Package Dimensions A B C D E F G H K |
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Multicomp |
Bipolar Transistor high breakdown voltage, Low leakage current, low capacity, and beta useful over an extremely wide current range. Maximum Ratings: Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Continuous Collector Current Total |
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Multicomp |
15A Power Transistors • The 2N3055H is a Silicon power base transistor for high power audio, seriespass power supplies, disk-head positioners and other linear application. These devices can also be used in power switching circuits such as converters or inverters. • Highe |
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Multicomp |
Power Transistor • Excellent Safe Operating Areas • hFE (Min) 25 and 50 @ IC = 1A PNP Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Continuous Collector Current Base Current Continuous Total Device Dissi |
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Multicomp |
Bipolar Transistor |
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Multicomp |
Complementary Power Transistors • Power dissipation - PD = 115W at TC = 25°C. • DC current gain hFE = 20 to 70 at IC = 4.0A. • VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA. Pin 1. Base 2. Emitter Collector(Case) Dimensions Minimum Maximum A 38.75 39.96 B 19.28 22.23 |
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Multicomp |
High power NPN silicon power transistors • Forward biased second breakdown current capability IS/b = 2.5 A dc at VCE = 60V dc. • Pb-free packages. (TO-3) Style 1: Pin 1. Base 2. Emitter Collector (Case) Dimensions Minimum Maximum A 1.550 (39.37) Reference B - 1.050 (26.67) C 0.250 (6 |
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