| No. | Partie # | Fabricant | Description | Fiche Technique |
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Multicomp |
Low Power Bipolar Transistors • NPN Silicon Planar Switching Transistors. • Switching and Linear application DC and VHF Amplifier applications. TO-18 Metal Can Package Dimensions A B C D E F G H J K L Minimum Maximum 5.24 5.84 4.52 4.97 4.31 5.33 0.40 0.53 - 0.76 - 1.27 |
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Multicomp |
Transistor • Low peak point current: 2µA (Max.) • Low emitter reverse current: 200nA (Max.) • Passivated surface for reliability and uniformity Maximum Ratings Characteristic Symbol Rating Unit Power Dissipation (Note 1) RMS Emitter Current Peak Pulse |
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Multicomp |
High Speed Switching Transistors • NPN Silicon Planar Epitaxial Transistors. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. • 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power and High Speed Switching |
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Multicomp |
High Speed Switching Transistor • PNP silicon planar switching transistors • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics • Switching and linear application DC and VHF amplifier applications Absolute Maximum Ratings Description |
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Multicomp |
High Speed Switching Transistors • NPN Silicon Planar Epitaxial Transistors. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. • 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power and High Speed Switching |
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Multicomp |
Bipolar Transistor |
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Multicomp |
High Speed Switching Transistor • PNP silicon planar switching transistors • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics • Switching and linear application DC and VHF amplifier applications Absolute Maximum Ratings Description |
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Multicomp |
Transistor |
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Multicomp |
NPN Bipolar Transistor • Collector Emitter Breakdown Voltage • DC Current Gain • Current Gain Bandwidth Product • Low Noise Figure : BVCEO = 60 V dc (minimum) at IC = 10 mA dc : 1 µA dc to 10 mA dc : fT = 100 MHz (Typical) at IC = 500 µA dc : NF = 8 dB (Typical) at IC = |
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Multicomp |
Transistor high breakdown voltage low leakage current, low capacity, and beta useful over an extremely wide current range. Absolute Maximum Ratings: Collector-Base Voltage, Vcbo : 120V Collector-Emitter Voltage, Vceo : 65V Emitter-Base Voltage, Vebo : 7V |
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Multicomp |
General Purpose Transistor • PNP Silicon Planar Switching Transistor. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. • Switching And Linear Application DC to VHF Amplifier Applications. TO-39 Metal Can Package Dimensions A B C |
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