| No. | Partie # | Fabricant | Description | Fiche Technique |
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Motorola |
TMOS POWER FET peed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. MTV25N50E TMOS POWER FET 25 AMPERES 500 VOLTS RDS(on) = 0.200 OHM N –Channel Enhancement –Mode Silicon Gate ® D N –Chann |
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Motorola |
TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM r Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature MTV32N20E TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM N –Channel Enhancement –Mode Silicon Gate ® D N –Channel G CASE 433 –01, Style 2 D3PAK Surface Mount S M |
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Motorola |
TMOS POWER FET 16 AMPERES 500 VOLTS le to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature MTV16N50E TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM ® D N –Channel G CASE 433 –01, Style 2 D |
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Motorola |
TMOS POWER FET th ac –dc and dc –dc power supplies. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. ® D N –Ch |
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Motorola |
TMOS POWER FET 10 AMPERES 1000 VOLTS rticularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. ™ Data Sheet MTV10N100E TMOS POWER FET 10 AMPERES 1000 VOLTS |
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