| No. | Partie # | Fabricant | Description | Fiche Technique |
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Motorola |
LOW NOISE AUDIO TRANSISTORS |
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Motorola |
LOW NOISE AUDIO TRANSISTORS |
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Motorola Inc |
High Current Transistors V(BR)CEO BC635 BC637 BC639 V(BR)CBO BC635 BC637 BC639 V(BR)EBO ICBO — — — — 100 10 nAdc µAdc 45 60 80 5.0 — — — — — — — — Vdc 45 60 80 — — — — — — Vdc Vdc Collector – Base Breakdown Voltage (IC = 100 µAdc, IE = 0) Emitter – Base Breakdown Voltage |
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Motorola Inc |
High Current Transistors IB = 0) V(BR)CEO BC636 BC638 BC640 V(BR)CBO BC636 BC638 BC640 V(BR)EBO ICBO — — — — –100 –10 nAdc µAdc –45 –60 –80 –5.0 — — — — — — — — Vdc –45 –60 –80 — — — — — — Vdc Vdc Collector – Base Breakdown Voltage (IC = –100 µAdc, IE = 0) Emitter – Base B |
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Motorola Inc |
High Current Transistors V(BR)CEO BC635 BC637 BC639 V(BR)CBO BC635 BC637 BC639 V(BR)EBO ICBO — — — — 100 10 nAdc µAdc 45 60 80 5.0 — — — — — — — — Vdc 45 60 80 — — — — — — Vdc Vdc Collector – Base Breakdown Voltage (IC = 100 µAdc, IE = 0) Emitter – Base Breakdown Voltage |
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Motorola |
LOW NOISE AUDIO TRANSISTORS |
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Motorola Inc |
High Current Transistors |
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Motorola Inc |
Darlington Transistors 0 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, VBE = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICES ICB |
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Motorola |
DARLINGTON TRANSISTORS |
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Motorola |
LOW NOISE AUDIO TRANSISTORS |
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Motorola Inc |
High Current Transistors V(BR)CEO BC635 BC637 BC639 V(BR)CBO BC635 BC637 BC639 V(BR)EBO ICBO — — — — 100 10 nAdc µAdc 45 60 80 5.0 — — — — — — — — Vdc 45 60 80 — — — — — — Vdc Vdc Collector – Base Breakdown Voltage (IC = 100 µAdc, IE = 0) Emitter – Base Breakdown Voltage |
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Motorola Inc |
High Current Transistors IB = 0) V(BR)CEO BC636 BC638 BC640 V(BR)CBO BC636 BC638 BC640 V(BR)EBO ICBO — — — — –100 –10 nAdc µAdc –45 –60 –80 –5.0 — — — — — — — — Vdc –45 –60 –80 — — — — — — Vdc Vdc Collector – Base Breakdown Voltage (IC = –100 µAdc, IE = 0) Emitter – Base B |
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