| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Motorola Inc |
TMOS FET Transistor Gate Voltage Drain Current (VDS = 48 Vdc, VGS = 0) (VDS = 48 Vdc, VGS = 0, TJ = 125°C) Gate –Body Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0) V(BR)DSS IDSS — — IGSSF — 1.0 1.0 –10 60 — Vdc µAdc mAdc nAdc ON CHARACTERISTICS(1) Gate Threshold Vo |
|
|
|
|
Motorola |
PNP Transistor TOR - BASE VOLTAGE (VOLTS) 2-64 2N700,A (continued) ELECTRICAL CHARACTERISTICS (TA = 250 C unless otherwise noted) Characteristic Sym Test Conditions ~olleetor-Base BVCBO IC = 100 /lAde, IE = 0 ~reakdown Voltage ~olleetor-Emitter BVCEO IC = |
|
|
|
|
Motorola |
PNP Transistor e = 100 I'Adc) (Ie = 20 ",Adc) 2N711 2N711A 2N711B BVCES Collector-Emitter Breakdown Voltage (Ie = 5 mAde, IB = 0) BVCEO 2N711A, 2N711E Emitter-Base Breakdown Voltage (IE = 0.1 mAde, Ie = 0) 2N711 2N711A 2N711B BVEBO Collector-Base Cutoff Cur |
|
|
|
|
Motorola |
NPN Transistor ) avCEO 25 avCOO 25 BVEOO 5.0 ICEO - ICOO - - ON CHARACTERISTICS DC Current Oain' (IC = 10 mAdc, VCE =5.0 Vdc) (IC =10 qlAde, VCE =5.0 Vdc, TA =-55'C) Collector ·Emitter Saturation Voltage' (IC =10 mAde, IB =1. 0 mAde) aase-Emitter On Voltage" |
|
|
|
|
Motorola |
NPN silicon annular transistors .0 Vde, IC = 0) Symbol 2N735, 2N736 2N739, 2N740 2N735, 2N736 2N739, 2N740 BVCEO BVCBO BVEBO ICBO lEBO ON CHARACTERISTICS DC Current Gain (IC = 5.0 mAde, VCE = 5.0 Vde) Collector-Emitter Saturation Voltage (IC = 10 mAde, IB = 2.0 mAde) Base-Emit |
|
|
|
|
Motorola |
NPN silicon annular transistors .0 Vde, IC = 0) Symbol 2N735, 2N736 2N739, 2N740 2N735, 2N736 2N739, 2N740 BVCEO BVCBO BVEBO ICBO lEBO ON CHARACTERISTICS DC Current Gain (IC = 5.0 mAde, VCE = 5.0 Vde) Collector-Emitter Saturation Voltage (IC = 10 mAde, IB = 2.0 mAde) Base-Emit |
|
|
|
|
Motorola Inc |
TMOS FET Transistor RKING 2N7002LT1 = 702 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain –Source Breakdown Voltage (VGS = 0, ID = 10 µAdc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 |
|
|
|
|
Motorola |
PNP Transistor e = 100 I'Adc) (Ie = 20 ",Adc) 2N711 2N711A 2N711B BVCES Collector-Emitter Breakdown Voltage (Ie = 5 mAde, IB = 0) BVCEO 2N711A, 2N711E Emitter-Base Breakdown Voltage (IE = 0.1 mAde, Ie = 0) 2N711 2N711A 2N711B BVEBO Collector-Base Cutoff Cur |
|
|
|
|
Motorola |
NPN Transistor 0 Ohms) 2N718 2N1420 Collector- Emitter Saturation Voltage (11 (Ie = 150 mAdc, IB = 15 mAdc) Base-Emitter Saturation Voltage(1) (IC = 150 mAde, IB = 15 mAdc) (1) Pulse Test: PW ;:; 300 J1.S, Duty Cycle;:; 2% Symbol Min Typ ICBO BVCBO BVCER - _ 00 |
|
|
|
|
Motorola |
PNP Transistor TOR - BASE VOLTAGE (VOLTS) 2-64 2N700,A (continued) ELECTRICAL CHARACTERISTICS (TA = 250 C unless otherwise noted) Characteristic Sym Test Conditions ~olleetor-Base BVCBO IC = 100 /lAde, IE = 0 ~reakdown Voltage ~olleetor-Emitter BVCEO IC = |
|
|
|
|
Motorola |
NPN silicon annular transistors .0 Vde, IC = 0) Symbol 2N735, 2N736 2N739, 2N740 2N735, 2N736 2N739, 2N740 BVCEO BVCBO BVEBO ICBO lEBO ON CHARACTERISTICS DC Current Gain (IC = 5.0 mAde, VCE = 5.0 Vde) Collector-Emitter Saturation Voltage (IC = 10 mAde, IB = 2.0 mAde) Base-Emit |
|
|
|
|
Motorola |
NPN silicon transistor C Current Gain t1I (IC =150 mAde, VCE =10 Vdc) Collector-Emitter Saturation Voltage (11 (IC =150 mAde, IB =15 mAde) Base ·Emltter Saturation Voltage 111 (IC =150 mAde, ~ =15 mAde) hFE VCE(sat) VBE(sat) DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth |
|
|
|
|
Motorola |
PNP SILICON ANNULAR TRANSISTORS 6 DIA u-1. 0.019 U MIN 0.100 BAS( -"" -L..JfU'-"'-COLLECTOR 0.048 TO ·18 OUTLINE (Collector internally connected to case) 2-85 2N722, 2N1132, 2N1132A, 2N2303(continued) ELECTRICAL CHARACTERISTICS = (T" 2S ·C unless otherwise noted) I. Character |
|
|
|
|
Motorola |
SWITCHING TRANSISTOR |
|
|
|
|
Motorola |
PNP Transistor e = 100 I'Adc) (Ie = 20 ",Adc) 2N711 2N711A 2N711B BVCES Collector-Emitter Breakdown Voltage (Ie = 5 mAde, IB = 0) BVCEO 2N711A, 2N711E Emitter-Base Breakdown Voltage (IE = 0.1 mAde, Ie = 0) 2N711 2N711A 2N711B BVEBO Collector-Base Cutoff Cur |
|
|
|
|
Motorola |
NPN Transistor Note 4 Adjust VCC for proper VCE FIGURE 1 -100 MHz, CLASS C, COMMON BASE AMPLIFIER 2-71 2N707,A (continued) ELECTRICAL CHARACTERISTICS (Tc = 250 C unless otherwise noted) Characteristic I I I I Symbol Min Typ Max]~ OFF CHARACTERISTICS Collecto |
|
|
|
|
Motorola |
NPN Transistor Note 4 Adjust VCC for proper VCE FIGURE 1 -100 MHz, CLASS C, COMMON BASE AMPLIFIER 2-71 2N707,A (continued) ELECTRICAL CHARACTERISTICS (Tc = 250 C unless otherwise noted) Characteristic I I I I Symbol Min Typ Max]~ OFF CHARACTERISTICS Collecto |
|
|
|
|
Motorola |
NPN Transistor ) avCEO 25 avCOO 25 BVEOO 5.0 ICEO - ICOO - - ON CHARACTERISTICS DC Current Oain' (IC = 10 mAdc, VCE =5.0 Vdc) (IC =10 qlAde, VCE =5.0 Vdc, TA =-55'C) Collector ·Emitter Saturation Voltage' (IC =10 mAde, IB =1. 0 mAde) aase-Emitter On Voltage" |
|
|
|
|
Motorola |
PNP Transistor O +75 +100 T • • AMBIENT TEMPERATURE ( ·CI 2-67 2N705 (continued) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Collector-Base Breakdown Voltage (IC = 100 /.lAde, IE =0) Collector-Emitter Breakdown Voltage (ICE = 100 / |
|
|
|
|
Motorola |
PNP germanium mesa transistors e ~ 8.0 ! '\: 4.0 I~ o I Z.o 4.0 6.0 10 20 40 60 100 200 400 1000 FREQUENCY ( MH'i 2-92 2N741,A (continued) ELECTRICAL CHARACTER ISTICS (TA = 250C unless otherwise noted) Characteristic ON CHARACTERISTICS Collector-Base Breakdown Voltage |
|