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Motorola Inc |
SILICON BIDIRECTIOANAL TRIODE THYRISTORS |
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Motorola |
SILICON CONTROLLED RECTIFIERS |
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Motorola Inc |
TMOS SWITCHING FET TRANSISTORS |
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Motorola Inc |
TRIACS Silicon Bidirectional Triode Thyristors MT1 MT2 G CASE 221A-04 (TO-220AB) STYLE 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating *Peak Repetitive Off-State Voltage(1) (Gate Open, TJ = –40 to +110°C) 1/2 Sine Wave 50 to 60 Hz, Gate Open Symbol VDRM 2N6342, 2N6346 2N6343, 2N6 |
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Motorola Inc |
TMOS SWITCHING FET TRANSISTORS rage Temperature Range I ITJJ Tstg –55to +150 I“c 1 (1) The Power Dissipation of the psckaga mav result in a lower continuous drain current. (2) Pulse Width ~ 300 x OutV Cvcles 2.0% MPF6659 ~~~MPF6660 MPF6661 CASE 29-03 TO-226AE ~OS ia a tradem |
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Motorola |
silicon controlled rectifiers ate Current~Forward IGM 2.0 Peak Gate Voltage-Forward Reverse Operating Junction Temperature Range Storage Temperature Range Stud Torque VGFM VGRM TJ Tstg - 10 5.0 -65 to +125 -65 to +150 30 tvRSM for all types can be appUed on a continuous dc |
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Motorola |
PNP Transistor t DC/mW DC/mW FIGURE 1 - POWER ·TEMPERATURE DERATING 220 "- 200 r--..... ......., 180 " 1..0s 160 " ~ 1411 "'" ."- >= ;1; 120 ili 100 " C "- ~~ 80 60 " ~ 40 "" 20 o '" 20 .......... ' \ . 'JC = 0.25DC/mW ........ "\.. 'JA = 0.375DC/mW"'- . |
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Motorola |
NPN Silicon RF Power Transistors |
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Motorola |
High Voltage NPN Silicon Power Transistors ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Rating Symbol Value 350 375 450 6.0 15 30 10 20 25 50 Unit Vdc Vdc |
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Motorola |
NPN SILICON POWER TRANSISTORS — High Temperature Performance Specified for: Reversed Biased SOA with Inductive Loads CASE 1 –07 TO –204AA Switching Times with Inductive Loads Saturation Voltages ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎLeakage Currents ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ |
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Motorola |
High Power NPN SIlicon Transistor |
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Motorola Inc |
Sensitive Gate Triacs TRIACs 4 AMPERES RMS 200 thru 600 VOLTS MT1 MT2 G MT2 G MT2 MT1 CASE 77-08 (TO-225AA) STYLE 5 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating *Peak Repetitive Off-State Voltage(1) (Gate Open, TJ = 25 to 110°C) 2N6071A,B 2N6073A,B 2N6 |
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Motorola Inc |
Silicon Controlled Rectifiers |
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Motorola Inc |
4 AMPERE POWER TRANSISTOR |
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Motorola Inc |
TMOS SWITCHING FET TRANSISTORS |
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Motorola |
silicon controlled rectifiers ate Current~Forward IGM 2.0 Peak Gate Voltage-Forward Reverse Operating Junction Temperature Range Storage Temperature Range Stud Torque VGFM VGRM TJ Tstg - 10 5.0 -65 to +125 -65 to +150 30 tvRSM for all types can be appUed on a continuous dc |
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Motorola |
PNP Transistor mall Signal Current Gain Cutoff Frequency VCB = 6 V, ~ - 1. 0 mA fab 1.5 2.0 2.5 MHz Output Capacity Cob 10 10 10 pF VCB .. 6 V, ~ • 0 mA, I,. 1 MHz Noise Figure = VCE 4. 5 V, IE .. O. 5 mA, R,. =I, f =kHz .1f-lHz Collector Reverse Curr |
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Motorola Semiconductor |
Silicon Controlled Rectifiers ve Forward Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 125°C) Circuit Fusing (t = 8.3 ms) IT(RMS) IT(AV) ITSM I2t 16 10 160 145 Amps Amps Amps A2s Forward Peak Gate Power Forward Average Gate Power Forward Peak Gate Current Operating Junctio |
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Motorola |
Darlington Transistors ) (IC = 10 mAdc, VBE = 0) Collector – Base Breakdown Voltage (IC = 100 m Adc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 m Adc, IC = 0) Collector Cutoff Current (VCE = 25 Vdc, IB = 0) Collector Cutoff Current (VCB= 30 Vdc, IE = 0) Emitter Cuto |
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Motorola |
SILICON CONTROLLED RECTIFIERS |
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