| No. | Partie # | Fabricant | Description | Fiche Technique |
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Motorola |
PNP germanium mesa transistors CHART TYPE 2N1141 2N1142 2N1143 2N1195 Typical! 00 MHz Noise Figure Minimum BVclO @ VCE = -10Vdc.IE = lmAdc @Ic = -10011 Adc.IE = 0 Rs= 7SQ Minimum h,. @Ic = -10mAdc. VC& = -10Vdc. f = 100MHz 35 Vdc 30Vdc 25 Vdc 4.0 db 4.5 db 5.0 db 12 db 10 |
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Motorola |
PNP Transistor eristics apply to corresponding "A" type numbers also. Characteristic S,mbol Min Max Unit Collector-Base Cutoff Current (YCB " 25Y) (YCB : 40Y) (YCB " 55Y) (YCB" 65Y) (VCB " 80Y) Collector- Base Cutoff Current (V CB (VCB " " 2Y) I 2 BVCES rati |
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Motorola |
PNP germanium power transistor r Ratio VCE = 2 V IC = 1. 0 Adc DC Current Transfer Ratio VCE = 2 V IC = 3.0 Adc Small-Signal Current Transfer Ratio Cutoff Frequency VCE = 2 Vdc IC = 3 Amp Emitter- Base Cutoff Current VEB = 40 Vdc IC = 0 Collector- Base Cutoff Current VCB = 2 Vdc I |
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Motorola |
silicon controlled rectifiers e Temperature Range Stud Torque PG(AV) IGM VGFM VGRM TJ Tstg - 0.5 2.0 10 5.0 -65 to +125 -65 to +150 30 Watt Amp Volts °c °c in. lb. *VRSM(rep) for all types can be applied on a continuous dc basis without incurring damage. Ratings apply for zer |
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Motorola |
PNP Transistor go into secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a collector-emitter short. POWER · TEMPERATURE DERATING CURVE 160 150 S 140 !. 120 ~ 100 :iii 80 .iii 60 I 40 ..a. |
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Motorola |
PNP Transistor rating Junction and Storage Temperature Range VEB IC PD PD TJ Tstg 4.0 Vdc 500 mAdc 750 mW 10 mW/oC 300 mW 4.0 mWjOC 500 mW 6.67 mW/oC -65 to +100 °C 2-180 2N 1204,A SERIES (continued) ELECTRICAL CHARACTERISTICS (TA = 250 C unle |
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Motorola |
PNP Transistor tion @ TC = 250 C PD Derate above 250 C 106 Watts 1.25 W/oC Operating and Storage Junction Temperature Range TJ' Tstg -65 to +110 °c THERMAL CHARACTERISTICS Cha racteristic Thermal Resistance, Junction to Case Symbol Max Unit 6JC 0.. |
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Motorola |
PNP germanium power transistors ector-Emitter Voltage (Ic = 1.0 amp, IB = 0) 1.0 amp, IB = 0 300 mA, IB = 0 Floating Potential (IE = 0, VCB = 80 yolts) lOO 80 Current Gain (Ic = 1. 2 amp, VCB = 2 yolts) (IC = 5 amp, VCB= 2 yolts) (Ic = 12 amp, VCB = 2 yolts) Base-Emitter Voltage (I |
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Motorola |
PNPgermanium transistors V, IE'" L(} rnA) Symbol Min ICBO - lEBO - ICER - Cob - NF - Typ Max Unit - 15 /lAdc 2.0 - /lAdc - 15 /lAdc - 600 /lAdc 20 - pF 10 - dB 2N1l91 2N1l92 2N1l93 2N1l94 fab - - - - 1.5 - MHz 2.0 - 2.5 - 3.0 - 2-178 2Nl |
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Motorola |
PNPgermanium transistors V, IE'" L(} rnA) Symbol Min ICBO - lEBO - ICER - Cob - NF - Typ Max Unit - 15 /lAdc 2.0 - /lAdc - 15 /lAdc - 600 /lAdc 20 - pF 10 - dB 2N1l91 2N1l92 2N1l93 2N1l94 fab - - - - 1.5 - MHz 2.0 - 2.5 - 3.0 - 2-178 2Nl |
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Motorola |
PNPgermanium transistors dc, RBE = 10K) - ICER .uAdc - 600 Collector-Emitter Punch-Thru Voltage (VEB = 1 Vdc, VTVM Impedance ~ 1 M ohm - - Vpt Vdc 45 Output Capacitance ", (VCB ;: 6 Vdc, IE = 0, f = 1 MHz) - Cob pF 12.0 25 Noise Figure (VCE = 4.5 Vdc' IE = 0.5 mA |
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Motorola |
PNP germanium transistors N1186 thru 2N1188 All Types Emitter-Base Cutoff Current (V EB = 30 V, IC = 0) Collector-Emitter Leakage Current (VCE = 30 V, RBE = 10 K) (VCE = 45 V, RBE = 10 K) 2N1185 2N1186 thru 2N1188 Collector-Emitter Punch-Thru Voltage (V F = 1. 0 V, 2N11 |
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Motorola |
PNP germanium power transistors ' 2N1164A-7A' Collector- Emitter Breakdown Voltage** (IC = 500 mA, VEB = 0) 2N1162A-3A' 2NI164A-5A* 2N1166A-7A* ICBO .. BVCES Emitter Cutoff Current (V EB = 12 V, IC = 0) lEBO DC Forward Current Gain (VCE = I V, IC = 25 A) (VCE = 2 V, IC = 5 |
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Motorola |
PNP germanium power transistors ' 2N1164A-7A' Collector- Emitter Breakdown Voltage** (IC = 500 mA, VEB = 0) 2N1162A-3A' 2NI164A-5A* 2N1166A-7A* ICBO .. BVCES Emitter Cutoff Current (V EB = 12 V, IC = 0) lEBO DC Forward Current Gain (VCE = I V, IC = 25 A) (VCE = 2 V, IC = 5 |
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Motorola |
PNP germanium power transistors ' 2N1164A-7A' Collector- Emitter Breakdown Voltage** (IC = 500 mA, VEB = 0) 2N1162A-3A' 2NI164A-5A* 2N1166A-7A* ICBO .. BVCES Emitter Cutoff Current (V EB = 12 V, IC = 0) lEBO DC Forward Current Gain (VCE = I V, IC = 25 A) (VCE = 2 V, IC = 5 |
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Motorola |
PNP SILICON ANNULAR TRANSISTORS MAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient *Indicates JEOeC Registered Data. Symbol 2N1131,A 2N1991 8Je 75 62.5 8JA 250 208 Unit °elW °e/w PNPSILICON AMPLIFIER AND SWITCHIN |
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Motorola |
PNP germanium power transistors eratures such that: Allowable p. = 110' - Te -1-.0- Watts 2Nl073 10 S.O 3.0 ,c.:- :;. ~ i 1.0 ~'''"""' o.s 0.3 is '~ "' ~'" 0.1 g ;;i ~ .os V\I \ IN rj) sm,l\J 1m, :\=f-\ 500~' 2S0~' "'SO~, I ~ O~ .,..l 1\ SAFE OPERATING AREAS - PULS |
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Motorola |
PNP GERMANIUM MEDIUM POWER TRANSISTORS c Adc mW mW/oC Watts W/oC **Operating and Storage Junction Temperature Range TJ,Tstg - -65 to +100 - - - °c THERMAL CHARACTERISTICS Characteristic Thermal Resistance. Junction to Case illi :molA~ 0.310 DIA Q.lliI [340 0.390 -+ 0.1414 O0.. |
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Motorola |
PNP germanium powertransistorsfor = 60 Vdc, TC = + 55°C) 2Nl021 2Nl022 2Nl021 2Nl022 2Nl021 2Nl022 Collector-Emitter Breakdown Voltage* (Ie = 200 mAde) .Symbll Mill Mu Ualt leBO mAdc - 0.5 - 0.5 - 2.0 - 2.0 - 8.0 - 8.0 - BVCEO* Vde 50 Emitter-Base Cutoff Current (VEB = 10 Vd |
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Motorola |
silicon controlled rectifiers e Temperature Range Stud Torque PG(AV) IGM VGFM VGRM TJ Tstg - 0.5 2.0 10 5.0 -65 to +125 -65 to +150 30 Watt Amp Volts °c °c in. lb. *VRSM(rep) for all types can be applied on a continuous dc basis without incurring damage. Ratings apply for zer |
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