| No. | Partie # | Fabricant | Description | Fiche Technique |
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Motorola Inc |
Dual Switching Diode Vdc) (VR = 50 Vdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, RL = 100 Ω, IR(REC) = 1.0 mAdc) (Figure 1) Forward Recovery Voltage (IF |
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Motorola Inc |
CASE 318-08/ STYLE 9 SOT-23 (TO-236AB) Voltage (I(BR) = 100 µAdc) Reverse Voltage Leakage Current (VR = 25 Vdc, TJ = 150°C) (VR = 70 Vdc) (VR = 70 Vdc, TJ = 150°C) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) Revers |
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Motorola Inc |
Monolithic Dual Switching Diode ge Leakage Current (VR = 50 Vdc, TJ = 125°C) (VR = 50 Vdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, measured at IR = 1.0 mA, RL = 100 Ω) 1. FR – 5 = 1.0 0.7 |
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Motorola Inc |
Dual Series Switching Diode to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING BAV99LT1 = A7 1. FR –5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina Thermal Clad is a registered trademark of the Berquist Company. Preferred devices are Motorol |
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Motorola Inc |
SC-70/SOT-323 Dual Series Switching Diode sipation FR –5 Board,(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature 1. FR –5 = 1. |
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Motorola Inc |
SC-70/SOT-323 Dual Series Switching Diode stic Total Device Dissipation FR –5 Board,(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Tem |
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