Mospec Semiconductor URF fiche technique

No.	Partie #	Fabricant	Description
1	URF2015	Mospec Semiconductor	Ultrafast Power RECTIFIERS ＊High Surge Capacity ＊Low Power Loss, High efficiency ＊Glass Passivated chip junctions ＊175℃ Operating Junction Temperature ＊Low Stored Charge Majority Carrier Conduction ＊Low Forward Voltage , High Current Capability ＊High-Switching Speed 35 Nanosec
2	URF2005	Mospec Semiconductor	Ultrafast Power RECTIFIERS ＊High Surge Capacity ＊Low Power Loss, High efficiency ＊Glass Passivated chip junctions ＊175℃ Operating Junction Temperature ＊Low Stored Charge Majority Carrier Conduction ＊Low Forward Voltage , High Current Capability ＊High-Switching Speed 35 Nanosec
3	SR510L	Mospec Semiconductor	Surface Mount Schottky Barrier rectifiers ＊Low Forward Voltage. ＊Low Switching noise. ＊High Current Capacity ＊Guarantee Reverse Avalanche. ＊Guard-Ring for Stress Protection. ＊Low Power Loss & High efficiency. ＊150℃ Operating Junction Temperature ＊Low Stored Charge Majority Carrier Conduction
4	URF2010	Mospec Semiconductor	Ultrafast Power RECTIFIERS ＊High Surge Capacity ＊Low Power Loss, High efficiency ＊Glass Passivated chip junctions ＊175℃ Operating Junction Temperature ＊Low Stored Charge Majority Carrier Conduction ＊Low Forward Voltage , High Current Capability ＊High-Switching Speed 35 Nanosec
5	URF2020	Mospec Semiconductor	Ultrafast Power RECTIFIERS ＊High Surge Capacity ＊Low Power Loss, High efficiency ＊Glass Passivated chip junctions ＊175℃ Operating Junction Temperature ＊Low Stored Charge Majority Carrier Conduction ＊Low Forward Voltage , High Current Capability ＊High-Switching Speed 35 Nanosec