| No. | Partie # | Fabricant | Description | Fiche Technique |
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Mospec Semiconductor |
POWER RECTIFIERS ＊Glass Passivated chip junctions ＊Low Reverse Leakage Current ＊Fast Switching for High Efficiency ＊150℃ Operating Junction Temperature ＊Low Stored Charge Majority Carrier Conduction ＊Low Forward Voltage , High Current Capability ＊Plastic Material us |
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Mospec Semiconductor |
POWER RECTIFIERS ＊Glass Passivated chip junctions ＊Low Reverse Leakage Current ＊Fast Switching for High Efficiency ＊150℃ Operating Junction Temperature ＊Low Stored Charge Majority Carrier Conduction ＊Low Forward Voltage , High Current Capability ＊Plastic Material us |
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Mospec Semiconductor |
POWER RECTIFIERS ＊Glass Passivated chip junctions ＊Low Reverse Leakage Current ＊Fast Switching for High Efficiency ＊150℃ Operating Junction Temperature ＊Low Stored Charge Majority Carrier Conduction ＊Low Forward Voltage , High Current Capability ＊Plastic Material us |
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Mospec Semiconductor |
POWER RECTIFIERS |
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Mospec Semiconductor |
POWER RECTIFIERS |
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Mospec Semiconductor |
POWER RECTIFIERS |
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Mospec Semiconductor |
POWER RECTIFIERS(1.0A /50-400V) |
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Mospec Semiconductor |
(SRF1670 - SRF16100) Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. * Low Forward Voltage. * Low Switching noise. * High Current Ca |
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Mospec Semiconductor |
POWER RECTIFIERS ＊Glass Passivated chip junctions ＊Low Reverse Leakage Current ＊Fast Switching for High Efficiency ＊150℃ Operating Junction Temperature ＊Low Stored Charge Majority Carrier Conduction ＊Low Forward Voltage , High Current Capability ＊Plastic Material us |
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Mospec Semiconductor |
(SRF1670 - SRF16100) Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. * Low Forward Voltage. * Low Switching noise. * High Current Ca |
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Mospec Semiconductor |
POWER RECTIFIERS |
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Mospec Semiconductor |
(SRF1670 - SRF16100) Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. * Low Forward Voltage. * Low Switching noise. * High Current Ca |
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Mospec Semiconductor |
(SRF1670CE - SRF16100CE) Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. * Low Forward Voltage. * Low Switching noise. * High Current Ca |
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Mospec Semiconductor |
(SRF1670CE - SRF16100CE) Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. * Low Forward Voltage. * Low Switching noise. * High Current Ca |
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Mospec Semiconductor |
(SRF1670 - SRF16100) Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. * Low Forward Voltage. * Low Switching noise. * High Current Ca |
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Mospec Semiconductor |
(SRF1670CE - SRF16100CE) Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. * Low Forward Voltage. * Low Switching noise. * High Current Ca |
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Mospec Semiconductor |
(SRF1670CE - SRF16100CE) Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. * Low Forward Voltage. * Low Switching noise. * High Current Ca |
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