Mitsubishi RM5 fiche technique

No.	Partie #	Fabricant	Description
1	RM500DZ-24	Mitsubishi	DIODE MODULES
2	RM500UZ-2H	Mitsubishi Electric Semiconductor	HIGH POWER GENERAL USE INSULATED TYPE 1700 1280 Unit V V V Symbol IF (RMS) IF (AV) IFSM I2t f Tj Tstg Viso Parameter RMS forward current Average forward current Surge (non-repetitive) forward current I2t for fusing Maximum operating frequency Junction temperature Storage temperature I
3	RM500DZ-2H	Mitsubishi Electric Semiconductor	DIODE MODULES 1700 1280 Unit V V V Symbol IF (RMS) IF (AV) IFSM I2t f Tj Tstg Viso Parameter RMS forward current Average forward current Surge (non-repetitive) forward current I2t for fusing Maximum operating frequency Junction temperature Storage temperature I
4	RM500DZ-H	Mitsubishi Electric Semiconductor	HIGH POWER GENERAL USE INSULATED TYPE 1700 1280 Unit V V V Symbol IF (RMS) IF (AV) IFSM I2t f Tj Tstg Viso Parameter RMS forward current Average forward current Surge (non-repetitive) forward current I2t for fusing Maximum operating frequency Junction temperature Storage temperature I
5	RM500DZ-M	Mitsubishi Electric Semiconductor	HIGH POWER GENERAL USE INSULATED TYPE 1700 1280 Unit V V V Symbol IF (RMS) IF (AV) IFSM I2t f Tj Tstg Viso Parameter RMS forward current Average forward current Surge (non-repetitive) forward current I2t for fusing Maximum operating frequency Junction temperature Storage temperature I
6	RM500HA-M	Mitsubishi Electric Semiconductor	HIGH POWER GENERAL USE INSULATED TYPE d current I2t for fusing Maximum operating frequency Junction temperature Storage temperature Isolation voltage Charged part to case Main terminal screw M8 Conditions Single-phase, half-wave 180° conduction, TC=90°C One half chcle at 60Hz, peak valu
7	RM50CA-XXS	Mitsubishi Electric Semiconductor	MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE V N ·m kg ·cm N ·m kg ·cm g Surge (non-repetitive) forward current I2t for fusing Junction temperature Storage temperature Isolution voltage One half cycle at 60Hz, peak value Value for one cycle of surge current Charged part to case Main terminal scr
8	RM50D2Z-40	Mitsubishi Electric Semiconductor	HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE urrent Surge (non-repetitive) forward current I2t for fusing Maximum operating frequency Junction temperature Storage temperature Isolation voltage Charged part to case Main terminal screw M5 Conditions Single-phase, half-wave 180° conduction, TC=86
9	RM50DA-XXS	Mitsubishi Electric Semiconductor	MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE V N ·m kg ·cm N ·m kg ·cm g Surge (non-repetitive) forward current I2t for fusing Junction temperature Storage temperature Isolution voltage One half cycle at 60Hz, peak value Value for one cycle of surge current Charged part to case Main terminal scr
10	RM50HA-XXF	Mitsubishi Electric Semiconductor	HIGH SPEED SWITCHING USE INSULATED TYPE ure Storage temperature Isolation voltage Charged part to case Main terminal screw M4 Resistive load, TC=105°C Conditions Ratings 50 1000 4.2x103 –40~150 –40~125 2500 0.98~1.47 10~15 1.47~1.96 15~20 90 Unit A A A2s °C °C V N ·m kg ·cm N ·m kg ·cm g O
11	RM500HA-24	Mitsubishi Electric Semiconductor	HIGH POWER GENERAL USE INSULATED TYPE d current I2t for fusing Maximum operating frequency Junction temperature Storage temperature Isolation voltage Charged part to case Main terminal screw M8 Conditions Single-phase, half-wave 180° conduction, TC=90°C One half chcle at 60Hz, peak valu
12	RM500HA-2H	Mitsubishi Electric Semiconductor	HIGH POWER GENERAL USE INSULATED TYPE d current I2t for fusing Maximum operating frequency Junction temperature Storage temperature Isolation voltage Charged part to case Main terminal screw M8 Conditions Single-phase, half-wave 180° conduction, TC=90°C One half chcle at 60Hz, peak valu
13	RM500HA-H	Mitsubishi Electric Semiconductor	HIGH POWER GENERAL USE INSULATED TYPE d current I2t for fusing Maximum operating frequency Junction temperature Storage temperature Isolation voltage Charged part to case Main terminal screw M8 Conditions Single-phase, half-wave 180° conduction, TC=90°C One half chcle at 60Hz, peak valu
14	RM500UZ-24	Mitsubishi Electric Semiconductor	HIGH POWER GENERAL USE INSULATED TYPE 1700 1280 Unit V V V Symbol IF (RMS) IF (AV) IFSM I2t f Tj Tstg Viso Parameter RMS forward current Average forward current Surge (non-repetitive) forward current I2t for fusing Maximum operating frequency Junction temperature Storage temperature I
15	RM500UZ-H	Mitsubishi Electric Semiconductor	HIGH POWER GENERAL USE INSULATED TYPE 1700 1280 Unit V V V Symbol IF (RMS) IF (AV) IFSM I2t f Tj Tstg Viso Parameter RMS forward current Average forward current Surge (non-repetitive) forward current I2t for fusing Maximum operating frequency Junction temperature Storage temperature I
16	RM500UZ-M	Mitsubishi Electric Semiconductor	HIGH POWER GENERAL USE INSULATED TYPE 1700 1280 Unit V V V Symbol IF (RMS) IF (AV) IFSM I2t f Tj Tstg Viso Parameter RMS forward current Average forward current Surge (non-repetitive) forward current I2t for fusing Maximum operating frequency Junction temperature Storage temperature I
17	RM50C1A-XXF	Mitsubishi Electric Semiconductor	HIGH SPEED SWITCHING USE INSULATED TYPE e class 12 600 720 480 16* 800 960 640 20* 1000 1100 800 24 1200 1350 960 Unit V V V Conditions Resistive load, TC=105°C One half cycle at 60Hz, peak value Value for one cycle of surge current Ratings 50 1000 4.2x103 –40~150 –40~125 Unit A A A2s °
18	RM50C1A-XXS	Mitsubishi Electric Semiconductor	MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE V N ·m kg ·cm N ·m kg ·cm g Surge (non-repetitive) forward current I2t for fusing Junction temperature Storage temperature Isolution voltage One half cycle at 60Hz, peak value Value for one cycle of surge current Charged part to case Main terminal scr
19	RM50CA-XXF	Mitsubishi Electric Semiconductor	HIGH SPEED SWITCHING USE INSULATED TYPE e class 12 600 720 480 16* 800 960 640 20* 1000 1100 800 24 1200 1350 960 Unit V V V Conditions Resistive load, TC=105°C One half cycle at 60Hz, peak value Value for one cycle of surge current Ratings 50 1000 4.2x103 –40~150 –40~125 Unit A A A2s °
20	RM50DA-XXF	Mitsubishi Electric Semiconductor	HIGH SPEED SWITCHING USE INSULATED TYPE e class 12 600 720 480 16* 800 960 640 20* 1000 1100 800 24 1200 1350 960 Unit V V V Conditions Resistive load, TC=105°C One half cycle at 60Hz, peak value Value for one cycle of surge current Ratings 50 1000 4.2x103 –40~150 –40~125 Unit A A A2s °