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Mitsubishi Electric Semiconductor |
Nch POWER MOSFET rage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 30 ± 20 50 200 50 50 200 35 –55 ~ +150 –55 ~ +150 0.26 Unit V V A A A A A W °C °C g Feb.1999 L = 30µH MITSUBISHI Nch POWER MOSFET FS50ASJ-03 HIGH-SPEED SWITCHING USE EL |
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Mitsubishi |
Nch POWER MOSFET |
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Mitsubishi |
Nch POWER MOSFET |
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Mitsubishi Electric Semiconductor |
Nch POWER MOSFET V V A A W °C °C g Feb.1999 Typical value (1.5) MITSUBISHI Nch POWER MOSFET FS3VS-9 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf |
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Mitsubishi Electric Semiconductor |
Nch POWER MOSFET C °C g Feb.1999 MITSUBISHI Nch POWER MOSFET FS22SM-10 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch |
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Mitsubishi Electric Semiconductor |
Nch POWER MOSFET Typical value MITSUBISHI Nch POWER MOSFET FS22SM-9 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = |
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Mitsubishi Electric Semiconductor |
Nch POWER MOSFET Unit V V A A W °C °C g Feb.1999 Typical value MITSUBISHI Nch POWER MOSFET FS2AS-14A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) t |
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Mitsubishi Electric Semiconductor |
Nch POWER MOSFET l l l l omponents 21201 Itasca Street Chatsworth !"# $ % !"# FS2A THRU FS2M 2.0 Amp Fast Recovery Rectifier 50 to 1000 Volts Superfast Recovery Times For High Efficiency For Surface Mou |
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Mitsubishi Electric Semiconductor |
Nch POWER MOSFET l l l l omponents 21201 Itasca Street Chatsworth !"# $ % !"# FS2A THRU FS2M 2.0 Amp Fast Recovery Rectifier 50 to 1000 Volts Superfast Recovery Times For High Efficiency For Surface Mou |
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Mitsubishi Electric Semiconductor |
Nch POWER MOSFET power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V Conditions Ratings 600 ±30 4 12 35 –55 ~ +150 –55 ~ +150 2000 2.0 Unit V V A A W °C °C Vrms g Feb.1999 AC for 1minute, Terminal to case Typical |
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Mitsubishi Electric Semiconductor |
Nch POWER MOSFET eight Typical value VGS = 0V VDS = 0V Conditions Ratings 60 ±20 50 200 50 50 200 70 –55 ~ +150 –55 ~ +150 2.0 Unit V V A A A A A W °C °C g Feb.1999 L = 100µH MITSUBISHI Nch POWER MOSFET FS50UM-06 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERIS |
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Mitsubishi Electric Semiconductor |
Nch POWER MOSFET t V V A A W °C °C g Feb.1999 Typical value (1.5) MITSUBISHI Nch POWER MOSFET FS20VS-5 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) |
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Mitsubishi Electric Semiconductor |
Nch POWER MOSFET R and vice versa Input and/or output undervoltage monitoring, excludes option V Input and/or output undervoltage monitoring (VME), excludes option D Current sharing Cooling plate -9 E P D0…D9 V0, V2, V3 T B1 Pin allocation Pin 4 6 8 10 12 14 16 18 2 |
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Mitsubishi Electric Semiconductor |
Nch POWER MOSFET l l l l omponents 21201 Itasca Street Chatsworth !"# $ % !"# FS2A THRU FS2M 2.0 Amp Fast Recovery Rectifier 50 to 1000 Volts Superfast Recovery Times For High Efficiency For Surface Mou |
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Mitsubishi Electric Semiconductor |
Nch POWER MOSFET Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 150 ± 20 2 8 2 2 8 20 –55 ~ +150 –55 ~ +150 0.26 Unit V V A A A A A W °C °C g Feb.1999 L = 100µH MITSUBISHI Nch POWER MOSFET FS2ASJ-3 HIGH-SPEED SWITCHING USE ELECTR |
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Mitsubishi Electric Semiconductor |
Nch POWER MOSFET l l l l omponents 21201 Itasca Street Chatsworth !"# $ % !"# FS2A THRU FS2M 2.0 Amp Fast Recovery Rectifier 50 to 1000 Volts Superfast Recovery Times For High Efficiency For Surface Mou |
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Mitsubishi Electric Semiconductor |
Nch POWER MOSFET |
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Mitsubishi Electric Semiconductor |
Nch POWER MOSFET ue VGS = 0V VDS = 0V Conditions Ratings 60 ± 20 50 200 50 50 200 70 –55 ~ +150 –55 ~ +150 4.8 Unit V V A A A A A W °C °C g Feb.1999 L = 100µH MITSUBISHI Nch POWER MOSFET FS50SMJ-06 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V ( |
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Mitsubishi |
Nch POWER MOSFET |
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Mitsubishi |
Nch POWER MOSFET |
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