Mitsubishi Electric PM5 fiche technique

No.	Partie #	Fabricant	Description
1	PM50RLA060	Mitsubishi Electric Semiconductor	Intelligent Power Module a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is pos
2	PM50RSA060	Mitsubishi Electric Semiconductor	Intelligent Power Module ٗ Complete Output Power Circuit ٗ Gate Drive Circuit ٗ Protection Logic – Short Circuit – Over Current – Over Temperature – Under Voltage VWPC WP WFO VUPC UP UFO GND GND VVPC VP VFO VWPI OUT V CC OUT V CC OUT V CC OUT V CC OUT V CC OUT V C
3	PM50RLA120	Mitsubishi Electric Semiconductor	Intelligent Power Module a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is pos
4	PM50CLA060	Mitsubishi Electric Semiconductor	Intelligent Power Module a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is pos
5	PM50CSE060	Mitsubishi Electric Semiconductor	Intelligent Power Module a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. For example, typical VCE(sat)=1.7V b) Using new Diode which is designed to get soft reverse recovery characteristics. • 3φ 50A, 600V Current-sens
6	PM50CSE120	Mitsubishi Electric Semiconductor	Intelligent Power Module a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. b) Using new Diode which is designed to get soft reverse recovery characteristics. • 3φ 50A, 1200V Current-sense IGBT for 15kHz switching • Monol
7	PM50RSD120	Mitsubishi Electric Semiconductor	Intelligent Power Module a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. b) Using new Diode which is designed to get soft reverse recovery characteristics. c) Keeping the package compatibility. The layout/position of b
8	PM50CTK060	Mitsubishi Electric Semiconductor	Intelligent Power Module LATED PACKAGE EQUIVALENT CIRCUIT DIAGRAM WP VWP1 VP VVP1 UP VUP1 VWPC NC VVPC NC VUPC NC 9 11 10 12 5 7 6 8 1 3 2 4 FO NC 19 15 Rfo VNC WN 13 18 VN1 14 VN 17 UN 16 GND In FO VCC TEMP GND Si Out Th GND In FO VCC GND In FO VCC GND In VCC GN
9	PM52AUBW060	Mitsubishi Electric	Intelligent Power Module ondenser Input Type Invertor use. Fig.1 PACKAGE OUTLINES 73±1 57±1 2.54 2.54 2.54 5.08 5.08 5.08 45.72±0.5 (9.64) 21 20 21 19 18 2-φ4.5 w 1 w 1 w 16 17 2 15 t a .D 9-2.54 6 14 12 10 8 6 13 11 9 7 S a 53 e h 0.6 2.5 U 4 t e .c m o 16-0.
10	PM50CLB060	Mitsubishi Electric	Intelligent Power Module a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is pos
11	PM50RHA120	Mitsubishi Electric Semiconductor	Intelligent Power Module
12	PM50RSK060	Mitsubishi Electric Semiconductor	Intelligent Power Module ٗ Complete Output Power Circuit ٗ Gate Drive Circuit ٗ Protection Logic – Short Circuit – Over Current – Over Temperature – Under Voltage FO BR V CC V CC V CC V CC V CC V CC GND GND GND GND GND GND GND GND GND GND GND GND GND GND OUT
13	PM50RLB120	Mitsubishi Electric Semiconductor	Intelligent Power Module a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is pos
14	PM50RLB060	Mitsubishi Electric Semiconductor	Intelligent Power Module a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is pos
15	PM50CLB120	Mitsubishi Electric	Intelligent Power Module a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is pos
16	PM50RVA120	Mitsubishi Electric Semiconductor	Intelligent Power Module ٗ Complete Output Power Circuit ٗ Gate Drive Circuit ٗ Protection Logic – Short Circuit – Over Temperature – Under Voltage RfO GND FO IN VCC GND Si OUT GND FO IN VCC TEMP GND OUT Si TH GND FO IN VCC GND Si OUT GND FO IN VCC GND Si OUT GND FO I
17	PM50RSE120	Mitsubishi Electric Semiconductor	Intelligent Power Module a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. b) Using new Diode which is designed to get soft reverse recovery characteristics. • 3φ 50A, 1200V Current-sense IGBT for 15kHz switching • 15A,
18	PM50RSE060	Mitsubishi Electric Semiconductor	Intelligent Power Module a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. For example, typical VCE(sat)=1.7V b) Using new Diode which is designed to get soft reverse recovery characteristics. • 3φ 50A, 600V Current-sens
19	PM50RSD060	Mitsubishi Electric Semiconductor	Intelligent Power Module a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. For example, typical VCE(sat)=1.7V b) Using new Diode which is designed to get soft reverse recovery characteristics. c) Keeping the package comp
20	PM50RSA120	Mitsubishi Electric Semiconductor	Intelligent Power Module ٗ Complete Output Power Circuit V WPC WP W FO V UPC V VPC VP VFO V WPI V CC V CC V CC V CC V CC V CC GND GND GND GND GND GND GND GND GND GND GND GND GND GND FO FO FO FO FO FO OUT OUT OUT OUT OUT OUT OUT TEMP SI SI S