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Mitsubishi Electric |
(ML1xx18) LASER DIODES a laser high-power, which high-efficient a AlGaInP single •High Output Power: 100mW (Pulse) • High Efficiency: 1.0W/A (typ.) • Visible Light: 658nm (typ.) • Low Astigmatic Distance: 1µm (typ.) provides stable, is DESCRIPTION ML1XX18 semiconductor t |
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Mitsubishi Electric |
(ML1xx22) FOR OPTICAL INFORMATION SYSTEMS a high-power, high-efficient AlGaInP •High Output Power: 180mW (Pulse) • High Efficiency: 0.95W/A (typ.) • Visible Light: 658nm (typ.) • Low Aspect Ratio (θ⊥ / θ//): 1.8 (typ.) • Low Astigmatic Distance: 1 µm (typ.) DESCRIPTION ML1XX22 is semiconduc |
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Mitsubishi Electric Semiconductor |
MITSUBISHI LASER DIODES a laser high-power, which high-efficient a AlGaInP single •High Output Power: 100mW (Pulse) • High Efficiency: 1.0W/A (typ.) • Visible Light: 658nm (typ.) • Low Astigmatic Distance: 1µm (typ.) provides stable, is DESCRIPTION ML1XX18 semiconductor t |
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Mitsubishi Electric |
LASER DIODES a high-power, high-efficient AlGaInP •High Output Power: 200mW (Pulse) • High Efficiency: 0.95W/A (typ.) • Visible Light: 658nm (typ.) • Low Aspect Ratio (θ⊥ / θ// ): 1.8 (typ.) • Low Astigmatic Distance: 1 µm (typ.) DESCRIPTION ML1XX23 is semicondu |
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Mitsubishi Electric |
(ML1xx18) LASER DIODES a laser high-power, which high-efficient a AlGaInP single •High Output Power: 100mW (Pulse) • High Efficiency: 1.0W/A (typ.) • Visible Light: 658nm (typ.) • Low Astigmatic Distance: 1µm (typ.) provides stable, is DESCRIPTION ML1XX18 semiconductor t |
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Mitsubishi Electric |
(ML1xx22) FOR OPTICAL INFORMATION SYSTEMS a high-power, high-efficient AlGaInP •High Output Power: 180mW (Pulse) • High Efficiency: 0.95W/A (typ.) • Visible Light: 658nm (typ.) • Low Aspect Ratio (θ⊥ / θ//): 1.8 (typ.) • Low Astigmatic Distance: 1 µm (typ.) DESCRIPTION ML1XX22 is semiconduc |
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Mitsubishi Electric |
LASER DIODES a high-power, high-efficient AlGaInP •High Output Power: 160mW (Pulse) • High Efficiency: 0.95 W/A (typ.) • Visible Light: 658nm (typ.) • Low Aspect Ratio (θ⊥ / θ// ): 1.8 (typ.) • Low Astigmatic Distance: 1 µm (typ.) DESCRIPTION ML1XX21 is semicond |
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Mitsubishi Electric |
LASER DIODES a high-power, high-efficient AlGaInP •High Output Power: 230mW (Pulse) • High Efficiency: 0.95W/A (typ.) • Visible Light: 658nm (typ.) • Low Aspect Ratio (θ⊥ / θ// ): 1.8 (typ.) • Low Astigmatic Distance: 1 µm (typ.) DESCRIPTION ML1XX24 is semicondu |
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Mitsubishi Electric |
LASER DIODES a high-power, high-efficient AlGaInP •High Output Power: 250mW (Pulse) • High Efficiency: 0.95W/A (typ.) • Visible Light: 658nm (typ.) • Low Aspect Ratio (θ⊥ / θ// ): 1.8 (typ.) • Low Astigmatic Distance: 1 µm (typ.) DESCRIPTION ML1XX25 is semicondu |
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Mitsubishi Electric |
LASER DIODES a high-power, high-efficient AlGaInP •High Output Power: 300mW (Pulse) • High Efficiency: 0.95W/A (typ.) • Visible Light: 658nm (typ.) • Low Aspect Ratio (θ⊥ / θ// ): 1.8 (typ.) • Low Astigmatic Distance: 1 µm (typ.) DESCRIPTION ML1XX26 is semicondu |
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Mitsubishi Electric |
LASER DIODES a high-power, high-efficient AlGaInP •High Output Power: 350mW (Pulse) • High Efficiency: 0.95W/A (typ.) • Visible Light: 660nm (typ.) • Low Aspect Ratio (θ⊥ / θ// ): 1.7 (typ.) • Low Astigmatic Distance: 1 µm (typ.) This type is under development. |
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