| No. | Partie # | Fabricant | Description | Fiche Technique |
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Mitsubishi Electric Semiconductor |
Transistor Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 350 350 400 10 600 — 2080 15 — –40~+150 –40~+125 Charged part to case, AC for 1 minute Main term |
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Mitsubishi Electric |
CMOS GAte Arrays w .D w at e h aS U 4 et m o .c www.DataSheet4U.com w w .D w at e h aS U 4 et m o .c |
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Mitsubishi Electric |
12-bit I/O EXPANDER • Bi-directional serial data communication with MCU • Read of serial data during parallel-serial conversion. • Bit resolution of serial data I/O • Low power dissipation (50µW/package max.) (VCC=5V, Ta =25°C, in quiescing) • Schmitt input (DI, CLK, S, |
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Mitsubishi Electric |
IGBT Module ector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 1200 ±20 600 1200 600 1200 1540 –40 ~ +150 –40 ~ +125 2500 8.8 ~ 10.8 |
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Mitsubishi Electric Semiconductor |
1.55 um DFB-LD MODULE Input impedance is 25W Multi qu antum wells (MQW) DFB Laser Diode module Emission wavelength is in 1.55mm band Polarization maintaining optical fiber pig-tail Built-in optical isolator Built-in thermal electric cooler Butterfly package With photodiod |
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Mitsubishi Electric Semiconductor |
IGBT Module ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ AC Motor Control ٗ Motion/Servo Control ٗ UPS ٗ Welding Power Supplies Ordering In |
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Mitsubishi Electric Semiconductor |
IGBT Module ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ AC Motor Control ٗ Motion/Servo Control ٗ UPS ٗ Welding Power Supplies Ordering In |
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Mitsubishi Electric Semiconductor |
IGBT MODULES ight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 1200 ±20 600 1200 600 1200 1900 –40 ~ +150 –40 ~ +125 2500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 600 Unit V V A A W °C °C V N •m N •m N •m g (Note 2) (Note 2) Main terminal |
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Mitsubishi Electric Semiconductor |
IGBT Module ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ AC Motor Control ٗ Motion/Servo Control ٗ UPS ٗ Welding Power Supplies E C E G |
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Mitsubishi Electric Semiconductor |
MEDIUM POWER GENERAL USE NON-INSULATED TYPE PG (AV) VFGM VRGM IFGM Tj Tstg Parameter RMS on-state current Average on-state current Surge (non-repetitive) on-state current I2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak g |
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Mitsubishi Electric Semiconductor |
MEDIUM POWER GENERAL USE NON-INSULATED TYPE t PGM PG (AV) VFGM VRGM IFGM Tj Tstg Parameter RMS on-state current Average on-state current Surge (non-repetitive) on-state current I2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation |
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Mitsubishi Electric Semiconductor |
HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE ol IF (RMS) IF (AV) IFSM I2t f Tj Tstg Viso Parameter RMS forward current Average forward current Surge (non-repetitive) forward current I2t for fusing Maximum operating frequency Junction temperature Storage temperature Isolation voltage Charged pa |
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Mitsubishi Electric Semiconductor |
MEDIUM POWER GENERAL USE NON-INSULATED TYPE f wave average current, TC=110°C One half cycle at 60Hz, peak value Value for one cycle of surge current Ratings 95 60 1200 6.0 × 103 1000 –40~150 –40~125 1.47~1.96 15~20 1.96~2.94 20~30 130 Unit A A A A2s Hz °C °C N ·m kg ·cm N ·m kg ·cm g — Mountin |
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Mitsubishi Electric |
12-bit I/O EXPANDER • Bi-directional serial data communication with MCU • Read of serial data during parallel-serial conversion. • Bit resolution of serial data I/O • Low power dissipation (50µW/package max.) (VCC=5V, Ta =25°C, in quiescing) • Schmitt input (DI, CLK, S, |
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Mitsubishi Electric |
IGBT Module current Emitter current Maximum collector dissipation Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight G-E Short C-E Short Operation Pulse Operation Pulse TC = 25°C TC’ = 25°C*4 Conditi |
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Mitsubishi Electric Semiconductor |
1.55 um DFB-LD MODULE Multi qu antum wells (MQW) DFB Laser Diode module Input impedance is 25W Emission wavelength is in 1.55mm band Polarization maintaining optical fiber pig-tail Built-in optical isolator Built-in thermal electric cooler Butterfly package With photodiod |
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Mitsubishi Electric Semiconductor |
IGBT Module |
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Mitsubishi Electric Semiconductor |
IGBT Module TC = 78°C*1 Pulse Pulse TC = 25°C*1 (Note 2) (Note 2) Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight Main terminal to base plate, AC 1 min. Main terminal M6 Mounting holes M6 Typica |
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Mitsubishi Electric Semiconductor |
IGBT Module ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ AC Motor Control ٗ Motion/Servo Control ٗ UPS ٗ Welding Power Supplies Ordering In |
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Mitsubishi Electric Semiconductor |
IGBT Module ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ AC Motor Control ٗ Motion/Servo Control ٗ UPS ٗ Welding Power Supplies Ordering In |
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