| No. | Partie # | Fabricant | Description | Fiche Technique |
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Mitsubishi |
NPN Epitaxial Planar Silicon Transistor = 6V, Ic = 0 VCE = 6V, Ic = 1mA VCE = 6V, Ic = 0,1mA V μA μA VCE(sat) Ic = 100mA, IB = 10mA V MHz pF dB Transition Frequency Collector Output Capacitance Noise Figure fT Cob NF VCE = 6V, IE = 10mA VCB = 6V, IE = 0, f = 1MHz VCE = 6V, IE = 0,3mA |
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Mitsubishi Electric |
RF POWER TRANSISTOR |
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Mitsubishi Electric |
NPN Silicon Epitaxial Planar Transistor |
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Mitsubishi |
2SC2320 = 6V, Ic = 0 VCE = 6V, Ic = 1mA VCE = 6V, Ic = 0,1mA V μA μA VCE(sat) Ic = 100mA, IB = 10mA V MHz pF dB Transition Frequency Collector Output Capacitance Noise Figure fT Cob NF VCE = 6V, IE = 10mA VCB = 6V, IE = 0, f = 1MHz VCE = 6V, IE = 0,3mA |
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Mitsubishi Electric |
2SC2312 |
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