| No. | Partie # | Fabricant | Description | Fiche Technique |
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Micross |
1M x 1 SRAM • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • Single +5V (+10%) Power Supply • Easy memory expansion with CE\ and OE\ options. • All inputs and outputs are TTL compatible • Three-state output OPTIONS • Ti |
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Micross |
128K x 8 SRAM • Access Times: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retention • Low power standby • High-performance, low-power CMOS process • Single +5V (+10%) Power Supply • Easy memory expansion with CE\ and OE\ options. • All inputs an |
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Micross |
32K x 8 SRAM • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns • Battery Backup: 2V data retention • Low power standby • High-performance, low-power CMOS double-metal process • Single +5V (+10%) Power Supply • Easy memory expansion with CE\ • All inputs and |
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Micross |
256K x 4 SRAM |
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