| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Microsemi |
AXIAL-LEAD TVS • Excellent protection in clamping direct ESD level transients in excess of 40,000 V per MIL-STD-750, Method 1020 (approx. 150 ns exponential wave) • Absorbs ESD level transients* of 14,000 Watts per MILSTD-750, Method 1020 (approximately 150 ns expo |
|
|
|
|
Microsemi Corporation |
RF & MICROWAVE TRANSISTORS |
|
|
|
|
Microsemi |
AXIAL-LEAD TVS • Excellent protection in clamping direct ESD level transients in excess of 40,000 V per MIL-STD-750, Method 1020 (approx. 150 ns exponential wave) • Absorbs ESD level transients* of 14,000 Watts per MILSTD-750, Method 1020 (approximately 150 ns expo |
|
|
|
|
Microsemi |
AXIAL-LEAD TVS • Excellent protection in clamping direct ESD level transients in excess of 40,000 V per MIL-STD-750, Method 1020 (approx. 150 ns exponential wave) • Absorbs ESD level transients* of 14,000 Watts per MILSTD-750, Method 1020 (approximately 150 ns expo |
|
|
|
|
Microsemi |
AXIAL-LEAD TVS • Excellent protection in clamping direct ESD level transients in excess of 40,000 V per MIL-STD-750, Method 1020 (approx. 150 ns exponential wave) • Absorbs ESD level transients* of 14,000 Watts per MILSTD-750, Method 1020 (approximately 150 ns expo |
|
|
|
|
Microsemi Corporation |
RF & MICROWAVE TRANSISTORS |
|
|
|
|
Microsemi |
AXIAL-LEAD TVS • Excellent protection in clamping direct ESD level transients in excess of 40,000 V per MIL-STD-750, Method 1020 (approx. 150 ns exponential wave) • Absorbs ESD level transients* of 14,000 Watts per MILSTD-750, Method 1020 (approximately 150 ns expo |
|
|
|
|
Microsemi |
AXIAL-LEAD TVS • Excellent protection in clamping direct ESD level transients in excess of 40,000 V per MIL-STD-750, Method 1020 (approx. 150 ns exponential wave) • Absorbs ESD level transients* of 14,000 Watts per MILSTD-750, Method 1020 (approximately 150 ns expo |
|
|
|
|
Microsemi |
AXIAL-LEAD TVS • Excellent protection in clamping direct ESD level transients in excess of 40,000 V per MIL-STD-750, Method 1020 (approx. 150 ns exponential wave) • Absorbs ESD level transients* of 14,000 Watts per MILSTD-750, Method 1020 (approximately 150 ns expo |
|
|
|
|
Microsemi |
AXIAL-LEAD TVS • Excellent protection in clamping direct ESD level transients in excess of 40,000 V per MIL-STD-750, Method 1020 (approx. 150 ns exponential wave) • Absorbs ESD level transients* of 14,000 Watts per MILSTD-750, Method 1020 (approximately 150 ns expo |
|
|
|
|
Microsemi |
AXIAL-LEAD TVS • Excellent protection in clamping direct ESD level transients in excess of 40,000 V per MIL-STD-750, Method 1020 (approx. 150 ns exponential wave) • Absorbs ESD level transients* of 14,000 Watts per MILSTD-750, Method 1020 (approximately 150 ns expo |
|
|
|
|
Microsemi |
SURFACE MOUNT |
|
|
|
|
Microsemi Corporation |
RF & MICROWAVE TRANSISTORS W W W . Microsemi . COM The SD1018 is an epitaxial silicon NPN planar transistor designed primarily for VHF mobile and marine transmitters. The device utilizes emitter ballasting resistors and improved metallization systems to achieve extreme rugge |
|
|
|
|
Microsemi Corporation |
RF & MICROWAVE Transistors W W W . Microsemi . COM The SD1014-02 is an epitaxial silicon NPN planar transistor designed primarily for VHF mobile and marine transmitters. The device utilizes emitter ballasting resistors and improved metallization systems to achieve extreme ru |
|
|
|
|
Microsemi Corporation |
RF & MICROWAVE TRANSISTORS |
|
|
|
|
Microsemi |
AXIAL-LEAD TVS • Excellent protection in clamping direct ESD level transients in excess of 40,000 V per MIL-STD-750, Method 1020 (approx. 150 ns exponential wave) • Absorbs ESD level transients* of 14,000 Watts per MILSTD-750, Method 1020 (approximately 150 ns expo |
|
|
|
|
Microsemi |
AXIAL-LEAD TVS • Excellent protection in clamping direct ESD level transients in excess of 40,000 V per MIL-STD-750, Method 1020 (approx. 150 ns exponential wave) • Absorbs ESD level transients* of 14,000 Watts per MILSTD-750, Method 1020 (approximately 150 ns expo |
|
|
|
|
Microsemi |
AXIAL-LEAD TVS • Excellent protection in clamping direct ESD level transients in excess of 40,000 V per MIL-STD-750, Method 1020 (approx. 150 ns exponential wave) • Absorbs ESD level transients* of 14,000 Watts per MILSTD-750, Method 1020 (approximately 150 ns expo |
|
|
|
|
Microsemi |
AXIAL-LEAD TVS • Excellent protection in clamping direct ESD level transients in excess of 40,000 V per MIL-STD-750, Method 1020 (approx. 150 ns exponential wave) • Absorbs ESD level transients* of 14,000 Watts per MILSTD-750, Method 1020 (approximately 150 ns expo |
|
|
|
|
Microsemi |
AXIAL-LEAD TVS • Excellent protection in clamping direct ESD level transients in excess of 40,000 V per MIL-STD-750, Method 1020 (approx. 150 ns exponential wave) • Absorbs ESD level transients* of 14,000 Watts per MILSTD-750, Method 1020 (approximately 150 ns expo |
|