| No. | Partie # | Fabricant | Description | Fiche Technique |
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Microsemi |
GaAs Schottky Diodes ● Low-Noise Performance ● High Cut-off Frequency ● Passivated to Enhance Reliability ● Packaged Diodes and Bondable Chips Applications ● Single and Balanced Mixers and Detectors ● Transceivers X, K and Ka Bands ● 30 and 60 GHz Radios ● Automotive Ra |
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Microsemi |
Schottky Diodes ● For Detector and Mixer Applications ● Vertical Offset Contact ● Low Capacitance Package (0.09 pF) ● Available as Bondable Chips ● Priced for Commercial Applications Specifications @ 25°C ● VF (1 mA): 0.39 V Max. ● VB (10 A): 3 V Min. ● IR (1 V): |
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Microsemi Corporation |
(MS8180 - MS8100) 8 Amp Schottky Rectifier |
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Microsemi Corporation |
(MS8180 - MS8100) 8 Amp Schottky Rectifier |
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Microsemi Corporation |
(MS8180 - MS8100) 8 Amp Schottky Rectifier |
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Microsemi |
GaAs Schottky Diodes ● Low-Noise Performance ● High Cut-off Frequency ● Passivated to Enhance Reliability ● Packaged Diodes and Bondable Chips Applications ● Single and Balanced Mixers and Detectors ● Transceivers X, K and Ka Bands ● 30 and 60 GHz Radios ● Automotive Ra |
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Microsemi |
GaAs Schottky Diodes ● Low-Noise Performance ● High Cut-off Frequency ● Passivated to Enhance Reliability ● Packaged Diodes and Bondable Chips Applications ● Single and Balanced Mixers and Detectors ● Transceivers X, K and Ka Bands ● 30 and 60 GHz Radios ● Automotive Ra |
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Microsemi |
GaAs Schottky Diodes ● Low-Noise Performance ● High Cut-off Frequency ● Passivated to Enhance Reliability ● Packaged Diodes and Bondable Chips Applications ● Single and Balanced Mixers and Detectors ● Transceivers X, K and Ka Bands ● 30 and 60 GHz Radios ● Automotive Ra |
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