| No. | Partie # | Fabricant | Description | Fiche Technique |
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MicrosemiCorporation |
25AmpSchottkyRectifier |
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Microsemi Corporation |
6 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS • • • • • • • • Chip Outline Dimensions: 68 x 68 mils Chip Thickness: 8 to 12 mils Anode Metallization: Aluminum Metallization Thickness: 70,000Ã Nominal Bonding Area: 42 x 42 mils Min. Back Metallization: Gold-3000Ã Nominal Junction Passivated wit |
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Microsemi Corporation |
6 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS • • • • • • • • Chip Outline Dimensions: 68 x 68 mils Chip Thickness: 8 to 12 mils Anode Metallization: Aluminum Metallization Thickness: 70,000Ã Nominal Bonding Area: 42 x 42 mils Min. Back Metallization: Gold-3000Ã Nominal Junction Passivated wit |
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Microsemi Corporation |
2.5 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS • • • • • • • • Chip Outline Dimensions: 41 x 41 mils Chip Thickness: 8 to 12 mils Anode Metallization: Aluminum Metallization Thickness: 50,000Ã Nominal Bonding Area: 23 x 23 mils Min. Back Metallization: Gold Junction Passivated with Thermal Sili |
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MicrosemiCorporation |
25AmpSchottkyRectifier |
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MicrosemiCorporation |
25AmpSchottkyRectifier |
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Microsemi Corporation |
2.5 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS • • • • • • • • Chip Outline Dimensions: 41 x 41 mils Chip Thickness: 8 to 12 mils Anode Metallization: Aluminum Metallization Thickness: 50,000Ã Nominal Bonding Area: 23 x 23 mils Min. Back Metallization: Gold Junction Passivated with Thermal Sili |
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Microsemi Corporation |
2.5 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS • • • • • • • • Chip Outline Dimensions: 41 x 41 mils Chip Thickness: 8 to 12 mils Anode Metallization: Aluminum Metallization Thickness: 50,000Ã Nominal Bonding Area: 23 x 23 mils Min. Back Metallization: Gold Junction Passivated with Thermal Sili |
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Microsemi Corporation |
2.5 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS • • • • • • • • Chip Outline Dimensions: 41 x 41 mils Chip Thickness: 8 to 12 mils Anode Metallization: Aluminum Metallization Thickness: 50,000Ã Nominal Bonding Area: 23 x 23 mils Min. Back Metallization: Gold Junction Passivated with Thermal Sili |
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Microsemi Corporation |
6 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS • • • • • • • • Chip Outline Dimensions: 68 x 68 mils Chip Thickness: 8 to 12 mils Anode Metallization: Aluminum Metallization Thickness: 70,000Ã Nominal Bonding Area: 42 x 42 mils Min. Back Metallization: Gold-3000Ã Nominal Junction Passivated wit |
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Microsemi Corporation |
6 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS • • • • • • • • Chip Outline Dimensions: 68 x 68 mils Chip Thickness: 8 to 12 mils Anode Metallization: Aluminum Metallization Thickness: 70,000Ã Nominal Bonding Area: 42 x 42 mils Min. Back Metallization: Gold-3000Ã Nominal Junction Passivated wit |
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Microsemi Corporation |
2.5 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS • • • • • • • • Chip Outline Dimensions: 41 x 41 mils Chip Thickness: 8 to 12 mils Anode Metallization: Aluminum Metallization Thickness: 50,000Ã Nominal Bonding Area: 23 x 23 mils Min. Back Metallization: Gold Junction Passivated with Thermal Sili |
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Microsemi Corporation |
2.5 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS • • • • • • • • Chip Outline Dimensions: 41 x 41 mils Chip Thickness: 8 to 12 mils Anode Metallization: Aluminum Metallization Thickness: 50,000Ã Nominal Bonding Area: 23 x 23 mils Min. Back Metallization: Gold Junction Passivated with Thermal Sili |
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Microsemi Corporation |
6 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS • • • • • • • • Chip Outline Dimensions: 68 x 68 mils Chip Thickness: 8 to 12 mils Anode Metallization: Aluminum Metallization Thickness: 70,000Ã Nominal Bonding Area: 42 x 42 mils Min. Back Metallization: Gold-3000Ã Nominal Junction Passivated wit |
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Microsemi Corporation |
6 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS • • • • • • • • Chip Outline Dimensions: 68 x 68 mils Chip Thickness: 8 to 12 mils Anode Metallization: Aluminum Metallization Thickness: 70,000Ã Nominal Bonding Area: 42 x 42 mils Min. Back Metallization: Gold-3000Ã Nominal Junction Passivated wit |
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Microsemi |
CONTROL DEVICE MONOLITHIC The MPS4101‐012S and MPS4102‐013S are a single chip silicon monolithic series/shunt element. The parasitic inductance is minimized Monolithic SPST PIN switch element in this design resulting in wide band, low loss, high isolation Wide |
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Microsemi |
CONTROL DEVICE MONOLITHIC The MPS4101‐012S and MPS4102‐013S are a single chip silicon monolithic series/shunt element. The parasitic inductance is minimized Monolithic SPST PIN switch element in this design resulting in wide band, low loss, high isolation Wide |
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