| No. | Partie # | Fabricant | Description | Fiche Technique |
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Microsemi |
Medical Implantable RF Transceiver • 402 –405 MHz (10 MICS-band channels) and 433 –434 MHz (2 ISM-band channels) • Raw Data Rates: 800/400/200/40/18.18kbit/s • High-Performance MAC with Automatic Error Handling and Flow Control • Very Few External Components (crystal, decoupling, and an |
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Microsemi Corporation |
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS • Eight NPN Darlington pairs • Collector currents to 600mA • Output voltages from 50V to 95V • Internal clamping diodes for inductive loads • DTL, TTL, PMOS, or CMOS compatible inputs • Hermetic ceramic package HIGH RELIABILITY FEATURES ♦ Available t |
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Microsemi |
Medical Implantable RF Transceiver • 402 –405 MHz (10 MICS channels) and 433 –434 MHz (2 ISM channels) • High Data Rate (800/400/200 kbit/s raw data rate) • High Performance MAC with Automatic Error Handling and Flow Control, Typically < 1.5×10−10 BER • Very Few External Components (3 p |
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Microsemi Corporation |
3 AMP MEDIUM POWER SILICON RECTIFIER DIODES |
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Microsemi Corporation |
3 AMP MEDIUM POWER SILICON RECTIFIER DIODES |
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Microsemi Corporation |
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS • Seven npn Darlington pairs • -55°C to 125°C ambient operating temperature range • Collector currents to 600mA • Output voltages from 50V to 95V • Internal clamping diodes for inductive loads • DTL, TTL, PMOS, or CMOS compatible inputs • Hermetic ce |
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Microsemi Corporation |
3 AMP MEDIUM POWER SILICON RECTIFIER DIODES |
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Microsemi Corporation |
3 AMP MEDIUM POWER SILICON RECTIFIER DIODES |
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Microsemi Corporation |
3 AMP MEDIUM POWER SILICON RECTIFIER DIODES |
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Microsemi Corporation |
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS • Seven npn Darlington pairs • -55°C to 125°C ambient operating temperature range • Collector currents to 600mA • Output voltages from 50V to 95V • Internal clamping diodes for inductive loads • DTL, TTL, PMOS, or CMOS compatible inputs • Hermetic ce |
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Microsemi Corporation |
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS • Eight NPN Darlington pairs • Collector currents to 600mA • Output voltages from 50V to 95V • Internal clamping diodes for inductive loads • DTL, TTL, PMOS, or CMOS compatible inputs • Hermetic ceramic package HIGH RELIABILITY FEATURES ♦ Available t |
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Microsemi Corporation |
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS • Eight NPN Darlington pairs • Collector currents to 600mA • Output voltages from 50V to 95V • Internal clamping diodes for inductive loads • DTL, TTL, PMOS, or CMOS compatible inputs • Hermetic ceramic package HIGH RELIABILITY FEATURES ♦ Available t |
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Microsemi Corporation |
3 AMP MEDIUM POWER SILICON RECTIFIER DIODES |
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Microsemi Corporation |
3 AMP MEDIUM POWER SILICON RECTIFIER DIODES |
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Microsemi Corporation |
3 AMP MEDIUM POWER SILICON RECTIFIER DIODES |
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Microsemi Corporation |
3 AMP MEDIUM POWER SILICON RECTIFIER DIODES |
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Microsemi |
NPN SILICON MEDIUM POWER TRANSISTOR • JEDEC registered 2N1483 through 2N1486 series. • JAN and JANTX qualifications are available per MIL-PRF-19500/180. • RoHS compliant versions available (commercial grade only). TO-8 Package APPLICATIONS / BENEFITS • General purpose transistors for |
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Microsemi Corporation |
NPN SILICON MEDIUM POWER TRANSISTOR 2 Vdc 2N1479, 2N1481 2N1480, 2N1482 2N1479, 2N1481 2N1480, 2N1482 2N1479, 2N1481 2N1480, 2N1482 V(BR)CEO 40 55 60 100 5.0 5.0 10 Vdc V(BR)CEX Vdc ICBO IEBO µAdc µAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) |
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Microsemi Corporation |
NPN SILICON MEDIUM POWER TRANSISTOR 2 Vdc 2N1479, 2N1481 2N1480, 2N1482 2N1479, 2N1481 2N1480, 2N1482 2N1479, 2N1481 2N1480, 2N1482 V(BR)CEO 40 55 60 100 5.0 5.0 10 Vdc V(BR)CEX Vdc ICBO IEBO µAdc µAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) |
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Microsemi Corporation |
NPN MEDIUM POWER SILICON TRANSISTOR tter-Base Cutoff Current VEB = 6.0 Vdc Collector-Emitter Cutoff Current VCE = 90 Vdc, VBE = 1.5 Vdc 2N4237 VCE = 50 Vdc 2N4238 VCE = 80 Vdc 2N4239 VCE = 10 Vdc Collector-Base Cutoff Current 2N4237 VCE = 50 Vdc 2N4238 VCE = 80 Vdc 2N4239 VCE = 10 Vdc |
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