| No. | Partie # | Fabricant | Description | Fiche Technique |
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Microsemi Corporation |
N-Channel FREDFET • Fast switching with low EMI • Low trr for high reliability • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant TYPICAL APPLICATIONS • ZVS phase shifted and other full bridge • Half bridge • PFC |
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Microsemi Corporation |
N-Channel MOSFET • Fast switching with low EMI/RFI • Low RDS(on) • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant TYPICAL APPLICATIONS • PFC and other boost converter • Buck converter • Two switch forward (asym |
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Microsemi Corporation |
N-Channel MOSFET • Fast switching with low EMI/RFI • Low RDS(on) • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant TYPICAL APPLICATIONS • PFC and other boost converter • Buck converter • Two switch forward (asym |
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Microsemi Corporation |
Full - Bridge NPT IGBT Power Module • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated - Symmetrical design • |
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Microsemi Corporation |
Power-Module IGBT • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitte |
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Microsemi Corporation |
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE • Ultrafast Recovery Times • Soft Recovery Characteristics • Popular TO-220 Package • Low Forward Voltage • Low Leakage Current • Avalanche Energy Rated PRODUCT BENEFITS • Low Losses • Low Noise Switching • Cooler Operation • Higher Reliability Syst |
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Microsemi Corporation |
FAST IGBT & FRED mps Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter B |
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Microsemi Corporation |
N-Channel FREDFET • Fast switching with low EMI • Low trr for high reliability • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant TYPICAL APPLICATIONS • ZVS phase shifted and other full bridge • Half bridge • PFC |
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Microsemi Corporation |
Phase leg Trench Field Stop IGBT Power Module • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for |
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Microsemi Corporation |
Thunderbolt IGBT • Low Forward Voltage Drop • Low Tail Current • Integrated Gate Resistor Low EMI, High Reliability • RoHS Compliant • RBSOA and SCSOA Rated • High Frequency Switching to 50KHz • Ultra Low Leakage Current S ISOTOP ® OT 22 7 "UL Recognized" file # |
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Microsemi Corporation |
Resonant Mode IGBT • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff • Low forward Diode Voltage (VF) • Ultrasoft Recovery Diode • SSOA Rated • RoHS Compliant Typical Applications • Induction Heating ISOTOP ® E G C E S OT 22 7 "UL Recogniz |
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Microsemi Corporation |
Thunderbolt IGBT • Low Forward Voltage Drop • Low Tail Current • Integrated Gate Resistor Low EMI, High Reliability • RoHS Compliant G E • RBSOA and SCSOA Rated • High Frequency Switching to 50KHz • Ultra Low Leakage Current G C E G C E C Maximum Ratings Sym |
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Microsemi Corporation |
Thunderbolt IGBT • Low Forward Voltage Drop • Low Tail Current • Integrated Gate Resistor Low EMI, High Reliability • RoHS Compliant G E • RBSOA and SCSOA Rated • High Frequency Switching to 50KHz • Ultra Low Leakage Current G C E G C E C Maximum Ratings Sym |
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Microsemi Corporation |
Buck chopper NPT IGBT Power Module • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for e |
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Microsemi Corporation |
Dual common source NPT IGBT Power Module • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for e |
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Microsemi Corporation |
IGBT Power Module • Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • High level o |
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Microsemi Corporation |
IGBT Power Module • Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • High level |
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Microsemi Corporation |
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE • Ultrafast Recovery Times • Soft Recovery Characteristics • Popular TO-220 Package • Low Forward Voltage • Low Leakage Current • Avalanche Energy Rated PRODUCT BENEFITS • Low Losses • Low Noise Switching • Cooler Operation • Higher Reliability Syst |
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Microsemi Corporation |
N-Channel MOSFET • Fast switching with low EMI/RFI • Low RDS(on) • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant TYPICAL APPLICATIONS • PFC and other boost converter • Buck converter • Two switch forward (asym |
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Microsemi Corporation |
(APT8DQ60x) ULTRAFAST SOFT RECOVERY RECTIFIER DIODE • Ultrafast Recovery Times • Soft Recovery Characteristics PRODUCT BENEFITS • Low Losses • Low Noise Switching TO-220 D2PAK 1 2 (SA) 1 • Cooler Operation • Popular TO-220 Package or Surface Mount D2 PAK Package • Higher Reliability Systems • |
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