Microsemi APL fiche technique

No.	Partie #	Fabricant	Description
1	APL502B2G	Microsemi	LINEAR MOSFET Energy 4 -55 to 150 300 58 50 3000 °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions / Part Number MIN TYP MAX UNIT BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA
2	APL502LG	Microsemi	LINEAR MOSFET Energy 4 -55 to 150 300 58 50 3000 °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions / Part Number MIN TYP MAX UNIT BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA
3	APL502B2	Microsemi	LINEAR MOSFET Energy 4 -55 to 150 300 58 50 3000 °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions / Part Number MIN TYP MAX UNIT BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA
4	APL502L	Microsemi	LINEAR MOSFET Energy 4 -55 to 150 300 58 50 3000 °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions / Part Number MIN TYP MAX UNIT BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA