No. | Partie # | Fabricant | Description | Fiche Technique |
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Microsemi Corporation |
ProASIC3 nano Flash FPGAs and Benefits Wide Range of Features • 10 k to 250 k System Gates • Up to 36 kbits of True Dual-Port SRAM • Up to 71 User I/Os Advanced I/Os • 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation • Bank-Selectable I/O Voltages—up to 4 Banks per Chi |
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Microsemi |
ProASIC3 Flash Family FPGAs and Benefits High Capacity • 15 k to 1 M System Gates • Up to 144 kbits of True Dual-Port SRAM • Up to 300 User I/Os Reprogrammable Flash Technology • 130-nm, 7-Layer Metal (6 Copper), Flash-Based CMOS Process • Instant On Level 0 Support • Single-Ch |
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Microsemi |
ProASIC3 Flash Family FPGAs and Benefits High Capacity • 15 k to 1 M System Gates • Up to 144 kbits of True Dual-Port SRAM • Up to 300 User I/Os Reprogrammable Flash Technology • 130-nm, 7-Layer Metal (6 Copper), Flash-Based CMOS Process • Instant On Level 0 Support • Single-Ch |
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Microsemi |
ProASIC3 Flash Family FPGAs and Benefits High Capacity • 15 k to 1 M System Gates • Up to 144 kbits of True Dual-Port SRAM • Up to 300 User I/Os Reprogrammable Flash Technology • 130-nm, 7-Layer Metal (6 Copper), Flash-Based CMOS Process • Instant On Level 0 Support • Single-Ch |
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Microsemi |
ProASIC3 Flash Family FPGAs and Benefits High Capacity • 15 k to 1 M System Gates • Up to 144 kbits of True Dual-Port SRAM • Up to 300 User I/Os Reprogrammable Flash Technology • 130-nm, 7-Layer Metal (6 Copper), Flash-Based CMOS Process • Instant On Level 0 Support • Single-Ch |
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Microsemi |
ProASIC3 Flash Family FPGAs and Benefits High Capacity • 15 k to 1 M System Gates • Up to 144 kbits of True Dual-Port SRAM • Up to 300 User I/Os Reprogrammable Flash Technology • 130-nm, 7-Layer Metal (6 Copper), Flash-Based CMOS Process • Instant On Level 0 Support • Single-Ch |
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Microsemi |
ProASIC3 Flash Family FPGAs and Benefits High Capacity • 15 k to 1 M System Gates • Up to 144 kbits of True Dual-Port SRAM • Up to 300 User I/Os Reprogrammable Flash Technology • 130-nm, 7-Layer Metal (6 Copper), Flash-Based CMOS Process • Instant On Level 0 Support • Single-Ch |
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Microsemi |
ProASIC3 Flash Family FPGAs and Benefits High Capacity • 15 k to 1 M System Gates • Up to 144 kbits of True Dual-Port SRAM • Up to 300 User I/Os Reprogrammable Flash Technology • 130-nm, 7-Layer Metal (6 Copper), Flash-Based CMOS Process • Instant On Level 0 Support • Single-Ch |
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Microsemi Corporation |
ProASIC3 nano Flash FPGAs and Benefits Wide Range of Features • 10 k to 250 k System Gates • Up to 36 kbits of True Dual-Port SRAM • Up to 71 User I/Os Advanced I/Os • 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation • Bank-Selectable I/O Voltages—up to 4 Banks per Chi |
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Microsemi Corporation |
ProASIC3 nano Flash FPGAs and Benefits Wide Range of Features • 10 k to 250 k System Gates • Up to 36 kbits of True Dual-Port SRAM • Up to 71 User I/Os Advanced I/Os • 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation • Bank-Selectable I/O Voltages—up to 4 Banks per Chi |
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Microsemi Corporation |
ProASIC3 nano Flash FPGAs and Benefits Wide Range of Features • 10 k to 250 k System Gates • Up to 36 kbits of True Dual-Port SRAM • Up to 71 User I/Os Advanced I/Os • 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation • Bank-Selectable I/O Voltages—up to 4 Banks per Chi |
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Microsemi Corporation |
ProASIC3 nano Flash FPGAs and Benefits Wide Range of Features • 10 k to 250 k System Gates • Up to 36 kbits of True Dual-Port SRAM • Up to 71 User I/Os Advanced I/Os • 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation • Bank-Selectable I/O Voltages—up to 4 Banks per Chi |
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Microsemi Corporation |
ProASIC3 nano Flash FPGAs and Benefits Wide Range of Features • 10 k to 250 k System Gates • Up to 36 kbits of True Dual-Port SRAM • Up to 71 User I/Os Advanced I/Os • 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation • Bank-Selectable I/O Voltages—up to 4 Banks per Chi |
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Microsemi Corporation |
ProASIC3 nano Flash FPGAs and Benefits Wide Range of Features • 10 k to 250 k System Gates • Up to 36 kbits of True Dual-Port SRAM • Up to 71 User I/Os Advanced I/Os • 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation • Bank-Selectable I/O Voltages—up to 4 Banks per Chi |
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Microsemi Corporation |
ProASIC3 nano Flash FPGAs and Benefits Wide Range of Features • 10 k to 250 k System Gates • Up to 36 kbits of True Dual-Port SRAM • Up to 71 User I/Os Advanced I/Os • 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation • Bank-Selectable I/O Voltages—up to 4 Banks per Chi |
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Microsemi Corporation |
ProASIC3 nano Flash FPGAs and Benefits Wide Range of Features • 10 k to 250 k System Gates • Up to 36 kbits of True Dual-Port SRAM • Up to 71 User I/Os Advanced I/Os • 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation • Bank-Selectable I/O Voltages—up to 4 Banks per Chi |
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Microsemi |
ProASIC3 Flash Family FPGAs and Benefits High Capacity • 15 k to 1 M System Gates • Up to 144 kbits of True Dual-Port SRAM • Up to 300 User I/Os Reprogrammable Flash Technology • 130-nm, 7-Layer Metal (6 Copper), Flash-Based CMOS Process • Instant On Level 0 Support • Single-Ch |
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