| No. | Partie # | Fabricant | Description | Fiche Technique |
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Microsemi Corporation |
PNP SWITCHING SILICON TRANSISTOR • JEDEC registered 2N2904 through 2N2905A series. • JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/290. (See part nomenclature for all available options.) • RoHS compliant versions available (commercial grade only). APPLI |
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Microsemi Corporation |
PNP TRANSISTOR 10mAdc Collector-Base Cutoff Current VCB = 60Vdc VCB = 50Vdc Emitter-Base Cutoff Current VEB = 4.0Vdc VEB = 5.0Vdc Collector-Emitter Cutoff Current VCE = 50Vdc V(BR)CEO ICBO IEBO ICES 60 Vdc 10 μAdc 10 ηAdc 50 ηAdc 10 μAdc 50 ηAdc TO-18 (TO-206AA |
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Microsemi Corporation |
PNP SWITCHING SILICON TRANSISTOR • JEDEC registered 2N2904 through 2N2905A series. • JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/290. (See part nomenclature for all available options.) • RoHS compliant versions available (commercial grade only). APPLI |
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Microsemi |
Rad Hard NPN Silicon High Speed Switching Transistor JEDEC registered 2N2369 TID level screened per MIL-PRF-19500 Also available with ELDRS testing to 0.01 Rad(s)/ sec MKCR / MHCR chip die available RHA (Radiation hardness assured) lot by lot validation testing via ELDR 0.1 Rad (SI)/sec d |
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Microsemi Corporation |
PNP SWITCHING SILICON TRANSISTOR • JEDEC registered 2N2904 through 2N2905A series. • JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/290. (See part nomenclature for all available options.) • RoHS compliant versions available (commercial grade only). APPLI |
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Microsemi Corporation |
5 Amp/ 80V/ Planar/ NPN Power Transistors JAN/JTX/JANTXV/JANS • • High Reliability Greater Gain Stability 5 Amp, 80V, Planar, NPN Power Transistors JAN,JTX,JANTXV,JANS DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices wit |
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Microsemi |
NPN BIPOLAR TRANSISTOR nearly 8.55 mW/0C above TC = +63.50C TO-46 (TO-206AB) 2N4449 Symbol Max. 146 125 135 117 325 350 437 291 0 Unit RθJC C/mW SURFACE MOUNT UA* RθJA 0 C/mW SURFACE MOUNT UB* 5) Derate linearly 2.86 mW/0C above TC = +63.50C 6) Derate linearly |
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Microsemi |
NPN SILICON SWITCHING TRANSISTOR nearly 8.55 mW/0C above TC = +63.50C TO-46 (TO-206AB) 2N4449 Symbol Max. 146 125 135 117 325 350 437 291 0 Unit RθJC C/mW SURFACE MOUNT UA* RθJA 0 C/mW SURFACE MOUNT UB* 5) Derate linearly 2.86 mW/0C above TC = +63.50C 6) Derate linearly |
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Microsemi |
Silicon Controlled Rectifiers |
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Microsemi Corporation |
SCRs 1.6 Amp/ Planear |
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Microsemi |
SWITCHING TRANSISTOR NPN SILICON n ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255 n AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS n GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS n LOW VCE(sat): .3V @ IC = 150 mAdc PHYSICAL DIMENSIONS Absolute Maximum Ratings: Symbo |
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Microsemi |
NPN-SWITCHIN SILICON TRANSISTOR TA > +25°C (2) Derate linearly 17.0mW/°C above TC > +25°C Value 59 Unit °C/W ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Volta |
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Microsemi |
NPN SILICON SWITCHING TRANSISTOR package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol V(BR)CEO ICBO Min. 50 10 10 10 10 50 Max. Unit Vdc µAdc ηAdc µAdc ηAdc ηAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc C |
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Microsemi |
NPN SILICON SWITCHING TRANSISTOR package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol V(BR)CEO ICBO Min. 50 10 10 10 10 50 Max. Unit Vdc µAdc ηAdc µAdc ηAdc ηAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc C |
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Microsemi |
NPN SILICON SWITCHING TRANSISTOR nearly 8.55 mW/0C above TC = +63.50C TO-46 (TO-206AB) 2N4449 Symbol Max. 146 125 135 117 325 350 437 291 0 Unit RθJC C/mW SURFACE MOUNT UA* RθJA 0 C/mW SURFACE MOUNT UB* 5) Derate linearly 2.86 mW/0C above TC = +63.50C 6) Derate linearly |
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Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • • • Silicon NPN, To-72 packaged UHF Transistor 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC 2 Maximum Unilateral Gain = 13 dB (typ) @ 500 MHz 1 4 3 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: Silicon NPN transistor, designed |
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Microsemi Corporation |
(2N2604 / 2N2605) PNP SILICON LOW POWER TRANSISTOR mitter-Base Cutoff Current VEB = 5.0 Vdc Collector-Emitter Cutoff Current VCE = 50 Vdc 2N2604 2N2605 V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES 80 70 60 6.0 10 2.0 10 Vdc Vdc Vdc ηAdc ηAdc ηAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) |
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Microsemi Corporation |
NPN SILICON LOW POWER TRANSISTOR V(BR)CEO Collector-Emitter Cutoff Current VCB = 25 Vdc VCB = 40 Vdc 2N2432 2N2432A ICES Min. 15 18 10 30 45 TO- 18* (TO-206AA) *See appendix A for package outline Max. Unit Vdc Vdc 10 ηAdc 10 6 Lake Street, Lawrence, MA 01841 1-800-446- |
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Microsemi |
NPN SILICON SWITCHING TRANSISTOR s. 1. Derate linearly 3.08mW/°C above TA > +37.5°C 2. Derate linearly 4.76mW/°C above TA > +63.5°C Max. 325 210 325 Unit °C/W ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector |
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Microsemi |
Rad Hard PNP Silicon Switching Transistor JEDEC registered 2N2907A TID level screened per MIL-PRF-19500 Also available with ELDRS testing to 0.01 Rad(s)/ sec MKCR/MHCR chip die available RHA (Radiation hardness assured) lot by lot validation testing via ELDR 0.1 Rad (SI)/sec dose |
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