| No. | Partie # | Fabricant | Description | Fiche Technique |
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Micron Technology |
1/3-INCH 2-MEGAPIXEL CMOS ACTIVE-PIXEL DIGITAL IMAGE SENSOR • • • • • • • • • • • • DigitalClarity™ CMOS Imaging Technology High frame rate Superior low-light performance Low dark current Simple two-wire serial interface Auto black level calibration Support for long integration times 2 x 2 binning Anti-aliasi |
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Micron Technology |
1/2-Inch 2 Megapixel CMOS Active-pixel Digital Image Sensor • • • • • • DigitalClarity ™ CMOS Imaging Technology High frame rate Excellent low light performance Low dark current Simple two-wire serial interface Auto black level calibration MT9D001 Micron Part Number: MT9D001C12STC Table 1: Key Performance |
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Micron Technology |
(MT9V022I77ATM / MT9V022I77ATC) Wide VGA CMOS Digital Image Sensor DigitalClarity™, Micron’s breakthrough, low-noise CMOS imaging technology that achieves CCD image quality (based on signal-tonoise ratio and low-light sensitivity) while maintaining the inherent size, cost, and integration advantages of CMOS. Applic |
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Micron Technology |
(MT9V022I77ATM / MT9V022I77ATC) Wide VGA CMOS Digital Image Sensor DigitalClarity™, Micron’s breakthrough, low-noise CMOS imaging technology that achieves CCD image quality (based on signal-tonoise ratio and low-light sensitivity) while maintaining the inherent size, cost, and integration advantages of CMOS. Applic |
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Micron Technology |
SYNCHRONOUS DRAM MODULE • JEDEC-standard 168-pin, dual in-line memory module (DIMM) • PC133- and PC100-compliant • Registered inputs with one-clock delay • Phase-lock loop (PLL) clock driver to reduce loading • Utilizes 133 MHz and 125 MHz SDRAM components • ECC-optimized p |
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Micron Technology |
SYNCHRONOUS DRAM MODULE • JEDEC-standard 168-pin, dual in-line memory module (DIMM) • PC133- and PC100-compliant • Registered inputs with one-clock delay • Phase-lock loop (PLL) clock driver to reduce loading • Utilizes 133 MHz and 125 MHz SDRAM components • ECC-optimized p |
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Micron Technology |
1/3-Inch Megapixel CMOS Active-Pixel Digital Image Sensor 1/3-Inch Megapixel CMOS Active-Pixel Digital Image Sensor MT9M011 For the latest data sheet revision, please refer to Micron’s Web site: www.micron.com/imaging Features • • • • • • • DigitalClarity ™ CMOS Imaging Technology High frame rate Superior |
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Micron Technology |
1/3-INCH SOC MEGAPIXEL CMOS DIGITAL IMAGE SENSOR • DigitalClarity CMOS Imaging Technology • System-on-a-Chip (SOC)—Completely integrated camera system • Ultra-low power, low cost, progressive scan CMOS image sensor • Superior low-light performance • On-chip image flow processor (IFP) performs sophi |
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Micron Technology |
3-MEGAPIXEL DIGITAL IMAGE SENSOR • DigitalClarity™ Image Sensor Technology • High frame rate • Global Reset Release www.DataSheet4U.com • Horizontal and vertical binning • Column and row skip modes • Superior low-light performance • Low dark current • Simple two-wire serial interfac |
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Micron Technology |
1/3.2-Inch System-On-A-Chip (SOC) CMOS Digital Image Sensor 1/3.2-Inch System-On-A-Chip (SOC) CMOS Digital Image Sensor MT9D111 Features • • • • • • • • • • • • DigitalClarity™ CMOS Imaging Technology Superior low-light performance Ultra-low-power, low-cost Internal master clock generated by on-chip phaselo |
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Micron Technology |
(MT9V022I77ATM / MT9V022I77ATC) Wide VGA CMOS Digital Image Sensor DigitalClarity™, Micron’s breakthrough, low-noise CMOS imaging technology that achieves CCD image quality (based on signal-tonoise ratio and low-light sensitivity) while maintaining the inherent size, cost, and integration advantages of CMOS. Applic |
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Micron Technology |
(MT9V022I77ATM / MT9V022I77ATC) Wide VGA CMOS Digital Image Sensor DigitalClarity™, Micron’s breakthrough, low-noise CMOS imaging technology that achieves CCD image quality (based on signal-tonoise ratio and low-light sensitivity) while maintaining the inherent size, cost, and integration advantages of CMOS. Applic |
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Micron Technology |
NONBUFFERED DRAM DIMMs • JEDEC-standard, eight-CAS#, ECC pinout in a 168-pin, dual in-line memory module (DIMM) • 16MB (2 Meg x 72) and 32MB (4 Meg x 72) • Nonbuffered • High-performance CMOS silicon-gate process • Single +3.3V ±0.3V power supply • All inputs, outputs and |
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Micron Technology |
NONBUFFERED DRAM DIMMs • JEDEC-standard, eight-CAS#, ECC pinout in a 168-pin, dual in-line memory module (DIMM) • 16MB (2 Meg x 72) and 32MB (4 Meg x 72) • Nonbuffered • High-performance CMOS silicon-gate process • Single +3.3V ±0.3V power supply • All inputs, outputs and |
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Micron Technology |
1/2-Inch Megapixel CMOS Digital Image Sensor 1/2-Inch Megapixel CMOS Digital Image Sensor MT9M001C12STM (Monochrome) For the latest data sheet, refer to Micron’s Web site: www.micron.com\imaging Features • DigitalClarity™ CMOS Imaging Technology • Array Format (5:4): 1,280H x 1,024V (1,310,72 |
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Micron Technology |
1/2-Inch 3-Megapixel CMOS Digital Image Sensor 1/2-Inch 3-Megapixel CMOS Digital Image Sensor MT9T001P12STC For the latest data sheet, refer to Micron’s Web site: www.micron.com/imaging www.DataSheet4U.com Features • • • • • • • • • DigitalClarity™ Image sensor technology High frame rate Global |
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Micron Technology |
128MB DDR SDRAM UNBUFFERED DIMM • JEDEC-standard 184-pin dual in-line memory module (DIMM) • Fast data transfer rate: PC3200 • CAS Latency 3 • Utilizes 400 MT/s DDR SDRAM components • Supports ECC error detection and correction • 128MB (16 Meg x 72), 256MB (32 Meg x 72), 512MB (64 |
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Micron Technology |
256MB DDR SDRAM UNBUFFERED DIMM • JEDEC-standard 184-pin dual in-line memory module (DIMM) • Fast data transfer rate: PC3200 • CAS Latency 3 • Utilizes 400 MT/s DDR SDRAM components • Supports ECC error detection and correction • 128MB (16 Meg x 72), 256MB (32 Meg x 72), 512MB (64 |
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Micron Technology |
1.3-MEGAPIXEL CMOS ACTIVE-PIXEL DIGITAL IMAGE SENSOR Top Level Specifications • Array Format: 1,280H x 1,024 V (1,310,720 pixels) • Pixel Size and Type: 12.0µm x 12.0µm TrueSNAP (shuttered-node active pixel) • Sensor Imaging Area: H: 15.36mm, V: 12.29mm, Diagonal: 19.67mm • Frame Rate: 0 –500+ fps @ (1, |
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Micron Technology |
1.3-MEGAPIXEL CMOS ACTIVE-PIXEL DIGITAL IMAGE SENSOR Top Level Specifications • Array Format: 1,280H x 1,024 V (1,310,720 pixels) • Pixel Size and Type: 12.0µm x 12.0µm TrueSNAP (shuttered-node active pixel) • Sensor Imaging Area: H: 15.36mm, V: 12.29mm, Diagonal: 19.67mm • Frame Rate: 0 –500+ fps @ (1, |
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