| No. | Partie # | Fabricant | Description | Fiche Technique |
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Microchip Technology |
512K (64K x 8) CMOS EPROM • High speed performance • CMOS Technology for low power consumption - 25 mA Active current - 30 µA Standby current • Factory programming available • Auto-insertion-compatible plastic packages • Auto ID aids automated programming • High speed express |
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Microchip Technology |
64K (8K x 8) CMOS EPROM • High speed performance - 120 ns access time available • CMOS Technology for low power consumption - 20 mA Active current - 100 µA Standby current • Factory programming available • Auto-insertion-compatible plastic packages • Auto ID aids automated |
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Microchip Technology |
256K (32K x 8) CMOS EPROM • High speed performance - 90 ns access time available • CMOS Technology for low power consumption - 20 mA Active current - 100 µA Standby current • Factory programming available • Auto-insertion-compatible plastic packages • Auto ID aids aut |
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Microchip Technology |
4K (512 x 8) CMOS EEPROM • Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 µA Standby • Fast Byte Write Time—200 µs or 1 ms • Data Retention >200 years • Endurance - Minimum 104 Erase/Write Cycles - Automatic Write Operation - In |
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Microchip Technology |
16K (2K x 8) CMOS EEPROM • Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 µA Standby • Fast Byte Write Time—200 µs or 1 ms • Data Retention >200 years • High Endurance - Minimum 104 Erase/Write Cycles • Automatic Write Operation |
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Microchip Technology |
16K (2K x 8) CMOS EEPROM • Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 µA Standby • Fast Byte Write Time—200 µs or 1 ms • Data Retention >200 years • High Endurance - Minimum 104 Erase/Write Cycles • Automatic Write Operation |
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