| No. | Partie # | Fabricant | Description | Fiche Technique |
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Microchip Technology |
1 Mbit SPI Bus Serial EEPROM • 20 MHz Maximum Clock Speed • Byte and Page-level Write Operations: - 256 byte page - 6 ms maximum write cycle time - No page or sector erase required • Low-Power CMOS Technology: - Maximum Write current: 7 mA at 5.5V - Maximum Read current: 10 mA a |
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Microchip Technology |
2K SPI Bus Serial EEPROM • Preprogrammed Globally Unique, 48-bit or 64-bit Node Address • Compatible with EUI-48™ and EUI-64™ • 10 MHz Maximum Clock Frequency • Low-Power CMOS Technology: - Maximum Write Current: 5 mA at 5.5V - Read Current: 5 mA at 5.5V, 10 MHz - Standby Cu |
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Microchip Technology |
(25AA160A/B) 16K SPI Bus Serial EEPROM • Max. Clock 10 MHz • Low-Power CMOS Technology • 2048 x 8-bit Organization • 16-Byte Page (‘A’ version devices) • 32-Byte Page (‘B’ version devices) • Write Cycle Time: 5 ms max. • Self-Timed Erase and Write Cycles • Block Write Protection: |
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MicrochipTechnology |
4K SPI Bus Serial EEPROM • Low-power CMOS technology: - Write current: 3 mA, typical - Read current: 500 μA, typical - Standby current: 500 nA, typical • 512 x 8-bit organization • 16 byte page • Write cycle time: 5 ms max. • Self-timed Erase and Write cycles • Blo |
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MicrochipTechnology |
8K SPI Bus Serial EEPROM • Low-power CMOS technology: - Write current: 3 mA maximum - Read current: 500 A typical - Standby current: 500 nA typical • 1024 x 8-bit organization • 16 byte page • Write cycle time: 5 ms max. • Self-timed erase and write cycles • Block |
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Microchip Technology |
(25AA160A/B) 16K SPI Bus Serial EEPROM • Max. Clock 10 MHz • Low-Power CMOS Technology • 2048 x 8-bit Organization • 16-Byte Page (‘A’ version devices) • 32-Byte Page (‘B’ version devices) • Write Cycle Time: 5 ms max. • Self-Timed Erase and Write Cycles • Block Write Protection: |
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Microchip Technology |
1K SPI Bus Serial EEPROM • 10 MHz max. Clock Frequency • Low-Power CMOS Technology: - Max. Write Current: 5 mA at 5.5V, 10 MHz - Read Current: 5 mA at 5.5V, 10 MHz - Standby Current: 5 μA at 5.5V • 128 x 8-bit Organization • Write Page mode (up to 16 bytes) • Sequen |
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Microchip Technology |
2K SPI Bus Serial EEPROM www.DataSheet4U.com • 10 MHz max. clock frequency Description: The Microchip Technology Inc. 25XX020A* is a 2 Kbit Serial Electrically Erasable Programmable Read-Only Memory (EEPROM). The memory is accessed via a simple Serial Peripheral Interface™ |
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MicrochipTechnology |
16K SPI Bus Serial EEPROM • Low-power CMOS technology: - Write current: 3 mA maximum - Read current: 500 A typical - Standby current: 500 nA typical • 2048 x 8-bit organization • 16 byte page • Write cycle time: 5 ms max. • Self-timed erase and write cycles • Block write p |
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Microchip Technology |
32K SPI Bus Serial EEPROM • Max. clock 10 MHz • Low-power CMOS technology - Max. Write Current: 5 mA at 5.5V, 10 MHz - Read Current: 5 mA at 5.5V, 10 MHz - Standby Current: 5 μA at 5.5V • 4096 x 8-bit organization • 32 byte page • Self-timed erase and write cycles (5 ms max. |
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MicrochipTechnology |
64K SPI Bus Serial EEPROM • Low-power CMOS technology - Write current: 3 mA typical - Read current: 500 µA typical - Standby current: 500 nA typical • 8192 x 8 bit organization • 32 byte page • Write cycle time: 5 ms max. • Self-timed ERASE and WRITE cycles • Block write prot |
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Microchip Technology |
128K SPI Bus Serial EEPROM • Max. Clock 10 MHz • Low-power CMOS Technology - Max. Write Current: 5 mA at 5.5V, 10 MHz - Read Current: 5 mA at 5.5V, 10 MHz - Standby Current: 5 μA at 5.5V • 16,384 x 8-bit Organization • 64 Byte Page • Self-timed Erase and Write Cycles (5 ms max |
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Microchip Technology |
512 Kbit SPI Bus Serial EEPROM • 20 MHz max. Clock Speed • Byte and Page-level Write Operations: - 128-byte page - 5 ms max. - No page or sector erase required • Low-Power CMOS Technology: - Max. Write Current: 5 mA at 5.5V, 20 MHz - Read Current: 10 mA at 5.5V, 20 MHz - Standby |
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Microchip Technology |
2K SPI Bus Serial EEPROM • Preprogrammed 32-Bit Serial Number: - Unique across all UID-family EEPROMs - Scalable to 48-bit, 64-bit, 128-bit, 256-bit, and other lengths • 10 MHz max. Clock Frequency • Low-Power CMOS Technology: - Max. write current: 5 mA at 5.5V - Read curre |
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Microchip Technology |
512 Kbit SPI Bus Serial EEPROM • 10 MHz max. Clock Speed • Byte and Page-level Write Operations - 128-byte page - 5 ms max. - No page or sector erase required • Low-Power CMOS Technology - Max. Write Current: 5 mA at 3.0V, 10 MHz - Read Current: 10 mA at 3.0V, 10 MHz - Standby Cu |
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Microchip Technology |
256K SPI Bus Serial EEPROM • Max. Clock 10 MHz • Low-Power CMOS Technology: - Max. Write Current: 5 mA at 5.5V, 10 MHz - Read Current: 6 mA at 5.5V, 10 MHz - Standby Current: 1 A at 5.5V • 32,768 x 8-bit Organization • 64-Byte Page • Self-Timed Erase and Write Cycles |
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