| No. | Partie # | Fabricant | Description | Fiche Technique |
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Microchip |
P-Channel Vertical DMOS FET • –2.4V Maximum Low Threshold • High Input Impedance • Low Input Capacitance (95 pF) • Fast Switching Speeds • Low On-Resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces (Ideal for TTL and C |
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Microchip |
P-Channel Vertical DMOS FET • –2.4V Maximum Low Threshold • High Input Impedance • Low-Input Capacitance (85 pF Typical) • Fast Switching Speeds • Low On-Resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces (Ideal for T |
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Microchip |
P-Channel Vertical DMOS FET • High Input Impedance and High Gain • Low Power Drive Requirement • Ease of Paralleling • Low CISS and Fast Switching Speeds • Excellent Thermal Stability • Integral Source-Drain Diode • Free from Secondary Breakdown Applications • Logic-Level Inter |
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