| No. | Partie # | Fabricant | Description | Fiche Technique |
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MicrochipTechnology |
4K SPI Bus Serial EEPROM • Low-power CMOS technology: - Write current: 3 mA, typical - Read current: 500 μA, typical - Standby current: 500 nA, typical • 512 x 8-bit organization • 16 byte page • Write cycle time: 5 ms max. • Self-timed Erase and Write cycles • Blo |
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MicrochipTechnology |
8K SPI Bus Serial EEPROM • Low-power CMOS technology: - Write current: 3 mA maximum - Read current: 500 A typical - Standby current: 500 nA typical • 1024 x 8-bit organization • 16 byte page • Write cycle time: 5 ms max. • Self-timed erase and write cycles • Block |
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MicrochipTechnology |
16K SPI Bus Serial EEPROM • Low-power CMOS technology: - Write current: 3 mA maximum - Read current: 500 A typical - Standby current: 500 nA typical • 2048 x 8-bit organization • 16 byte page • Write cycle time: 5 ms max. • Self-timed erase and write cycles • Block write p |
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MicrochipTechnology |
64K SPI Bus Serial EEPROM • Low power CMOS technology - Write current: 3 mA typical - Read current: 500 µA typical - Standby current: 500 nA typical • 8192 x 8 bit organization • 32 byte page • Write cycle time: 5ms max. • Self-timed ERASE and WRITE cycles • Block write prote |
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Microchip |
Bus Serial EEPROM • Low-power CMOS technology: - Write current: 3 mA maximum - Read current: 500 µA typical - Standby current: 500 nA typical • 4096 x 8 bit organization • 32 byte page • Write cycle time: 5 ms maximum • Self-timed erase and write cycles • Bl |
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Microchip |
4-Mbit SPI Serial EEPROM • 4-Mbit Serial EEPROM: - 524,288 x 8 organization - Page size of 256 bytes - Byte or sequential reads - Byte or page writes - Self-timed write cycle (5 ms maximum) • Security Register: - Preprogrammed 128-bit serial number - 256-byte user-programmab |
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