Micro Electronics GT- fiche technique

No.	Partie #	Fabricant	Description
1	ULN2801A	STMicroelectronics	EIGHT DARLINGTON ARRAYS ■ Eight Darlington transistors with common emitters ■ Output current to 500 mA ■ Output voltage to 50 V ■ Integral suppression diodes ■ Versions for all popular logic families ■ Output can be paralleled ■ Inputs pinned opposite outputs to simplify bo
2	ULN2804A	STMicroelectronics	EIGHT DARLINGTON ARRAYS ■ Eight Darlington transistors with common emitters ■ Output current to 500 mA ■ Output voltage to 50 V ■ Integral suppression diodes ■ Versions for all popular logic families ■ Output can be paralleled ■ Inputs pinned opposite outputs to simplify bo
3	SU0524A6GTR	Silan Microelectronics	4-CHANNEL LOW CAPACITANCE ESD PROTECTION DIODES ARRAY * 4 channels of ESD protection; * Provides ESD protection to IEC61000-4-2 level 4 - ±17kV air discharge - ±12kV contact discharge; * Channel I/O to GND capacitance: 0.9pF(Max) * Channel I/O to I/O capacitance: 0.45pF(Max) * Low clamping voltage; * 5V
4	ULN2004A	STMicroelectronics	SEVEN DARLINGTON ARRAYS ■ Seven darlingtons per package ■ Output current 500 mA per driver (600 mA peak) ■ Output voltage 50 V ■ Integrated suppression diodes for inductive loads ■ Outputs can be paralleled for higher current ■ TTL/CMOS/PMOS/DTL Compatible inputs ■ Inputs p
5	ULN2003A	STMicroelectronics	SEVEN DARLINGTON ARRAYS ■ Seven darlingtons per package ■ Output current 500 mA per driver (600 mA peak) ■ Output voltage 50 V ■ Integrated suppression diodes for inductive loads ■ Outputs can be paralleled for higher current ■ TTL/CMOS/PMOS/DTL Compatible inputs ■ Inputs p
6	TIP142	STMicroelectronics	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ■ Monolithic Darlington configuration ■ Integrated antiparallel collector-emitter diode Applications ■ Linear and switching industrial equipment Description The devices are manufactured in planar technology with “base island” layout and monolithic Da
7	ULQ2003A	STMicroelectronics	SEVEN DARLINGTON ARRAYS , CMOS 14-25V PMOS 5V TTL, CMOS 6-15V CMOS, PMOS PIN CONNECTION These versatile devices are useful for driving a wide range of loads including solenoids, relays DC motors, LED displays filament lamps, thermal printheads and high power buffers. The
8	BDX53C	STMicroelectronics	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Audio amplifiers ■ Linear and switching industrial equipment Description The devices are manufactured in
9	TIP147	STMicroelectronics	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ■ Monolithic Darlington configuration ■ Integrated antiparallel collector-emitter diode Applications ■ Linear and switching industrial equipment Description The devices are manufactured in planar technology with “base island” layout and monolithic Da
10	ULN2065B	STMicroelectronics	1.5A quad Darlington switche ■ Output current to 1.5 A for each Darlington ■ Minimum breakdown 80 V ■ Sustaining voltage at least 35 V ■ Integral suppression diodes (ULN2065B, ULN2067B and ULN2069B ■ Isolated Darlington pinout (ULN2075B) ■ Versions compatible with all popular lo
11	TIP121	STMicroelectronics	Low voltage complementary power Darlington transistor • Low collector-emitter saturation voltage TAB • Complementary NPN - PNP transistors TO-220 1 23 Application • General purpose linear and switching C (2, TAB) C (2, TAB) B (1) B (1) R1 R2 R1 R2 SC07840 E (3) SC07850 E (3) NPN: R1 = 7 kΩ
12	SGT60N60FD1	Silan Microelectronics	600V FIELD-STOP IGBT  60A, 600V,VCE(sat)(typ.)=2.2V@IC=60A  Low conduction loss  Fast switching  High input impedance C 2 1 G 3 E 123 TO-247-3L 12 3 TO-247S-3L 123 TO-3P 1 2 3 TO-3PN NOMENCLATURE IGBT series Current, 70: 70A N : N Channel NE : N-channel plan
13	BD680A	STMicroelectronics	Complementary power Darlington transistors ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Linear and switching industrial equipment Description The devices are manufactured in planar base islan
14	ULN2004	STMicroelectronics	SEVEN DARLINGTON ARRAYS • Seven Darlingtons per package • Output current 500 mA per driver (600 mA peak) • Output voltage 50 V • Integrated suppression diodes for inductive loads • Outputs can be paralleled for higher current • TTL/CMOS/PMOS/DTL compatible inputs • Input pi
15	SGT60N60FD1PN	Silan Microelectronics	600V FIELD-STOP IGBT  60A, 600V,VCE(sat)(typ.)=2.2V@IC=60A  Low conduction loss  Fast switching  High input impedance C 2 1 G 3 E 123 TO-247-3L 12 3 TO-247S-3L 123 TO-3P 1 2 3 TO-3PN NOMENCLATURE IGBT series Current, 70: 70A N : N Channel NE : N-channel plan
16	BDX33B	STMicroelectronics	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS e Junction-case 1.78 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l I CBO Parameter Collector Cut-off Current (I E = 0) Test Co nditions for BDX33B/34B for BDX33C/34C T cas e = 100 oC for BDX33B/34B f or BDX33C/
17	BDX33C	STMicroelectronics	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS e Junction-case 1.78 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l I CBO Parameter Collector Cut-off Current (I E = 0) Test Co nditions for BDX33B/34B for BDX33C/34C T cas e = 100 oC for BDX33B/34B f or BDX33C/
18	BDX54B	STMicroelectronics	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Audio amplifiers ■ Linear and switching industrial equipment Description The devices are manufactured in
19	TIP102	STMicroelectronics	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
20	TIP140	STMicroelectronics	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS T case ≤ 25 o C Storage Temperature Max. Operating Junction Temperature TIP140 TIP145 60 60 Value TIP141 TIP146 80 80 5 10 20 0.5 125 -65 to 150 150 TIP142 TIP147 100 100 V V V A A A W o o Unit C C For PNP types voltage and current values are neg