Micro Electronics BD2 fiche technique

No.	Partie #	Fabricant	Description
1	SBD20C100F	Silan Microelectronics	100V SCHOTTKY RECTIFIER ∗ Guard ring for Stress Protection ∗ High Surge Capacity ∗ Low power loss , high efficiency ∗ Low forward voltage drop ORDERING SPECIFICATIONS Part No. SBD20C100T SBD20C100F Package TO-220-3L TO-220F-3L Marking SBD20C100T SBD20C100F Material Pb
2	SBD20C45F	Silan Microelectronics	45V SCHOTTKY RECTIFIER ∗ Guard ring for Stress Protection ∗ High Surge Capacity ∗ Low power loss , high efficiency ∗ Low Forward Voltage Drop ∗ 125°C Operating Junction Temperature ORDERING INFORMATION Part No. SBD20C45T SBD20C45F Package TO-220-3L TO-220F-3L Marking S
3	BD244B	STMicroelectronics	COMPLEMENTARY SILICON POWER TRANSISTORS R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.92 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO I EBO Parameter Collector Cut-off Current (V B
4	BD241A	STMicroelectronics	NPN power transistors ■ NPN transistors Applications ■ Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coup
5	SBD20C45T	Silan Microelectronics	45V SCHOTTKY RECTIFIER ∗ Guard ring for Stress Protection ∗ High Surge Capacity ∗ Low power loss , high efficiency ∗ Low Forward Voltage Drop ∗ 125°C Operating Junction Temperature ORDERING INFORMATION Part No. SBD20C45T SBD20C45F Package TO-220-3L TO-220F-3L Marking S
6	BD243C	STMicroelectronics	Complementary power transistors ■ Complementary NPN-PNP devices Applications ■ Power linear and switching Description The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low sa
7	BD244C	STMicroelectronics	Complementary power transistors ■ Complementary NPN-PNP devices Applications ■ Power linear and switching Description The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low sa
8	BD236	STMicroelectronics	COMPLEMENTARY SILICON POWER TRANSISTORS tance Junction-case Max 5 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO I EBO Parameter Collector Cut-off Current (IE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = rated V CEO V CE = rat
9	BD243B	STMicroelectronics	COMPLEMENTARY SILICON POWER TRANSISTORS R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.92 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO I EBO Parameter Collector Cut-off Current (V B
10	SBD20C40T	Silan Microelectronics	40V SCHOTTKY RECTIFIER ∗ Guard ring for Stress Protection ∗ High Surge Capacity ∗ Low power loss , high efficiency ∗ Low Forward Voltage Drop * 125°C Operating Junction Temperature ORDERING SPECIFICATIONS Part No. SBD20C40T SBD20C40F Package TO-220-3L TO-220F-3L Markin
11	BD241B	STMicroelectronics	COMPLEMENTARY SILICON POWER TRANSISTORS
12	BD237	STMicroelectronics	Low voltage NPN power transistors ■ Low saturation voltage ■ NPN transistors Applications ■ Audio, power linear and switching applications Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain per
13	BD241C	STMicroelectronics	NPN power transistors ■ NPN transistors Applications ■ Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coup
14	BD242A	STMicroelectronics	COMPLEMENTARY SILICON POWER TRANSISTORS lues are negative. June 1997 1/4 BD241A/B/C/BD242A/B/C THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.13 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwis
15	SBD20C150F	Silan Microelectronics	150V SCHOTTKY RECTIFIER  Guard ring for Stress Protection  High Surge Capacity  Low power loss , high efficiency  Low forward voltage drop ORDERING INFORMATION Part No. SBD20C150T SBD20C150F SBD20C150T SBD20C150S SBD20C150STR Package TO-220-3L TO-220F-3L TO-220HW-3L
16	BD234	STMicroelectronics	SILICON PNP TRANSISTOR itions V CB = -45 V V CB = -45 V V EB = -5 V I C = -100 mA I C = -1 A I C = -1 A I C = -150 mA I C = -1 A I C = -250 mA I C = -150 mA I B = -0.1 A V CE = -2 V V CE = -2 V V CE = -2 V V CE = -10 V V CE = -2 V 40 25 3 1.6 MHz -45 -0.6 -1.3 T c = 150 C
17	BD235	STMicroelectronics	Low voltage NPN power transistors ■ Low saturation voltage ■ NPN transistors Applications ■ Audio, power linear and switching applications Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain per
18	BD238	STMicroelectronics	Low voltage PNP power transistor ■ Low saturation voltage ■ PNP transistor )Applications t(s ■ Audio, power linear and switching applications roducDescription PThe device is manufactured in planar technology tewith “Base Island” layout. The resulting transistor shows exceptional h
19	BD239C	STMicroelectronics	NPN power transistor ■ NPN transistor Applications ■ General purpose switching and amplifier transistor Description The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with ve
20	BD241BFP	STMicroelectronics	COMPLEMENTARY SILICON POWER TRANSISTORS rrent values are negative. April 1998 1/4 BD241BFP / BD242BFP THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 5.3 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CEO I CES I EBO Parameter Coll