Micro Electronics BC4 fiche technique

No.	Partie #	Fabricant	Description
1	BC478	STMicroelectronics	LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS
2	BC477	STMicroelectronics	LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS
3	BC485	Micro Electronics	NPN SILICON PLANAR EPITAXIAL TRANSISTOR
4	BC488	Micro Electronics	PNP SILICON PLANAR EPITAXIAL TRANSISTOR
5	BC413	Micro Electronics	SILICON PLANAR EPITAXIAL TRANSISTORS
6	BC415	Micro Electronics	SILICON PLANAR EPITAXIAL TRANSISTORS
7	BC450	Micro Electronics	PNP SILICON TRANSISTOR
8	BC486	Micro Electronics	PNP SILICON PLANAR EPITAXIAL TRANSISTOR
9	IRFBC40	STMicroelectronics	N-Channel Power MOSFET pulsed) Total Dissipation at Tc = 25 C Derating F actor Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junction Temperature o o o Value 600 600 ± 20 2 3.9 25 125 1.0 3 -65 to 150 150 (1) ISD ≤ 6.2 A, di/dt ≤ 80 A/µs, VDD ≤ V(
10	BC416	Micro Electronics	SILICON PLANAR EPITAXIAL TRANSISTORS
11	BC440	Micro Electronics	Silicon Transistor
12	BC441	Micro Electronics	Silicon Transistor
13	BC446	Micro Electronics	SILICON EPITAXIAL TRANSISTOR
14	BC479	STMicroelectronics	LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS
15	BC490	Micro Electronics	PNP SILICON PLANAR EPITAXIAL TRANSISTOR
16	BC414	Micro Electronics	SILICON PLANAR EPITAXIAL TRANSISTORS
17	BC445	Micro Electronics	SILICON EPITAXIAL TRANSISTOR
18	BC460	Micro Electronics	Silicon Transistor
19	BC461	Micro Electronics	Silicon Transistor
20	BC487	Micro Electronics	NPN SILICON PLANAR EPITAXIAL TRANSISTOR