| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
STMicroelectronics |
SMALL SIGNAL NPN TRANSISTORS /W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICBO Collector Cut-off Current (IE = 0) VCB = 20 V VCB = 20 V TC = 150 oC IEBO V(BR)CBO V(BR)CEO∗ V(BR)EBO VCE(sat)∗ Emitter Cut- |
|
|
|
|
STMicroelectronics |
SMALL SIGNAL NPN TRANSISTORS /W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICBO Collector Cut-off Current (IE = 0) VCB = 20 V VCB = 20 V TC = 150 oC IEBO V(BR)CBO V(BR)CEO∗ V(BR)EBO VCE(sat)∗ Emitter Cut- |
|
|
|
|
Micro Electronics |
NPN Silicon Transistor |
|
|
|
|
Micro Electronics |
NPN TRANSISTOR |
|
|
|
|
Micro Electronics |
NPN TRANSISTOR |
|
|
|
|
Micro Electronics |
NPN Silicon Transistor |
|
|
|
|
Micro Electronics |
PNP Silicon Transistor |
|
|
|
|
Micro Electronics |
PNP Silicon Transistor |
|
|
|
|
Micro Electronics |
NPN TRANSISTOR |
|
|
|
|
Micro Electronics |
NPN Silicon Transistor |
|
|
|
|
Micro Electronics |
(BC3xx) Transistors |
|
|
|
|
Micro Electronics |
(BC3xx) Transistors |
|
|
|
|
Micro Electronics |
(BC3xx) Transistors |
|
|
|
|
Micro Electronics |
(BC3xx) Transistors |
|
|
|
|
Micro Electronics |
PNP SILICON AF MEDIUM POWER TRANSISTOR |
|
|
|
|
Micro Electronics |
(BC3xx) Transistors |
|
|
|
|
Micro Electronics |
(BC3xx) Transistors |
|
|
|
|
Micro Electronics |
PNP SILICON TRANSISTOR IC = 100 mA Group -25 Group -40 VCE = 40 V VCE = 20 V VCE = 40 V, Tj = 125/C VCE = 20 V, Tj = 125/C BC 337 BC 338 BC 337 BC 338 hFE hFE hFE ICES ICES ICES ICES 100 160 250 – – – – Collector-Emitter cutoff current – Kollektorreststrom 1 ) Valid, if |
|
|
|
|
Micro Electronics |
COMPLEMENTARY SILICON EPITAXIAL TRANSISTOR |
|
|
|
|
STMicroelectronics |
HIGH VOLTAGE AMPLIFIER at ) * Collector-base Breakdown Voltage (IE = 0 ) Collector-emitter Breakdown Voltage (IB = 0 ) Emiter-base Breakdown Voltage (IC = 0 ) Collector-emitter Saturation Voltage VBE ( sat) * Base-emitter Saturation Voltage h F E * DC Curent Gain fT C |
|