| No. | Partie # | Fabricant | Description | Fiche Technique |
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ST Microelectronics |
High power NPN silicon transistor ■ High power dissipation ■ Low collector-emitter saturation voltage t(s)Description cThe device is a planar NPN transistor mounted in uTO-3 metal case. It is intended for linear rodamplifiers and inductive switching applications. 1 2 TO-3 Obsole |
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STMicroelectronics |
SMALL SIGNAL PNP TRANSISTOR |
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STMicroelectronics |
SMALL SIGNAL NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICEX Collector Cut-off Current (VBE = -3 V) IBEX Base Cut-off Current (VBE = -3 V) V(BR)CEO∗ Collector-Emitter Breakdown Voltage (IB = 0) |
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STMicroelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS • Low collector-emitter saturation voltage • Complementary NPN - PNP transistors Applications • General purpose • Audio amplifier Description The devices are manufactured in planar technology with “base island” layout and are suitable for audio, powe |
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Micro Electronics |
NPN/PNP SILICON AF SMALL SIGNAL TRANSISTORS |
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Micro Electronics |
PNP SILICON TRANSISTOR |
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Micro Electronics |
TRANSISTOR |
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STMicroelectronics |
Silicon Planar Epitaxial NPN transistor ) Collector-base Breakdown Voltage (I E = 0) Collector-emitter Breakdown Voltage (I B = 0) Emitter-base Breakdown Voltage (I C = 0) Collector-emitter Saturation Voltage Base-emitter Saturation Voltage DC Current Gain I C = 0.1 mA I C = 10 mA I C = 15 |
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Micro Electronics |
NPN/PNP SILICON AF SMALL SIGNAL TRANSISTORS |
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STMicroelectronics |
SMALL SIGNAL NPN TRANSISTOR high gain and low saturation voltage. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC Ptot Tstg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collec |
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STMicroelectronics |
Hi-Rel NPN bipolar transistor BVCEO IC (max) HFE at 10 V - 150 mA Operating temperature range 80 V 1A > 100 -65°C to +200°C ■ ■ ■ ■ ■ Hi-Rel NPN bipolar transistor Linear gain characteristics ESCC qualified European preferred part list - EPPL Radiation level: lot specific total |
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Micro Electronics |
NPN Silicon Transistor |
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STMicroelectronics |
SILICON NPN TRANSISTORS |
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STMicroelectronics |
Silicon Planar NPN Transistor |
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STMicroelectronics |
HIGH POWER NPN SILICON TRANSISTOR |
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Micro Electronics |
NPN SILICON EPITAXIAL TRANSISTOR |
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Micro Electronics |
(2N3107 - 2N3110) NPN Silicon AF Medium Amplifiers and Switches |
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Micro Electronics |
NPN SILICON EPITAXIAL TRANSISTOR |
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Micro Electronics |
TRANSISTOR |
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ST Microelectronics |
Power MOSFETs Type STL60N32N3LL ■ ■ ■ ■ ■ VDSS Q1 Q2 30 V 30 V RDS(on) ID < 0.012 Ω 12 A < 0.008 Ω 15 A RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses Po |
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