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JILIN SINO-MICROELECTRONICS |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR z High breakdown voltage z High current capability z High switching speed z High reliability z RoHS product TO-3PB ORDER MESSAGE Order codes 3DD13009K-O-C-N-B 3DD13009K-O-AB-N-B Marking D13009K D13009K Halogen Free NO NO Package TO-220C |
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JILIN SINO-MICROELECTRONICS |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR z High breakdown voltage z High current capability z High switching speed z High reliability z RoHS product ORDER MESSAGE Order codes 3DD13007M-O-C-N-B Marking D13007M Halogen Free NO Package TO-220C Packaging Tube ：200910C 1/5 R |
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STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • High voltage capability • Low spread of dynamic parameters • Very high switching speed Applications • Electronic ballast for fluorescent lighting (CFL) • SMPS for battery charger Description The device is manufactured using high voltage multi-epita |
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STMicroelectronics |
High voltage fast-switching NPN power transistor ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies Description This device is manufactured using hi |
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ST Microelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ature November 2002 Value 400 700 9 12 25 6 12 18 36 110 -65 to 150 150 Unit V V V A A A A A A W oC oC 1/6 MJE13009 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.14 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherw |
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STMicroelectronics |
High voltage fast-switching NPN power transistor ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies Description This device is manufactured using hi |
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JILIN SINO-MICROELECTRONICS |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR z High breakdown voltage z High current capability z High switching speed z High reliability z RoHS product TO-3PB ORDER MESSAGE Order codes 3DD13009K-O-C-N-B 3DD13009K-O-AB-N-B Marking D13009K D13009K Halogen Free NO NO Package TO-220C |
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Micro Electronics |
NPN Transistor ■ High Voltage Capability ■ High Speed Switching ■ Wide SOA TO-220F 1 2 3 TO-220 1 2 3 3 2.APPLICATION: 1:B 2:C 3:E ■ Fluorescent Lamp ■ Electronic Ballast ■ Switch mode power supply ■ Eletronic Transformer 3. ABSOLUTE MAXIMUM RATINGS(Ta=25℃ |
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JILIN SINO-MICROELECTRONICS |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR z High breakdown voltage z High current capability z High switching speed z High reliability z RoHS product ORDER MESSAGE Order codes 3DD13007MD-O-C-N-B 3DD13007MD-O-B-N-C Halogen Free NO NO Marking D13007MD D13007MD Package TO-220C TO |
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ST Microelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS 16 4 8 80 -65 to 150 150 33 Uni t V V V A A A A W o o C C March 1999 1/7 ST13007N / ST13007NFP THERMAL DATA T O- 220 R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-Ambient Max Max 1.56 62.5 T O-220F P 3.8 6 |
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STMicroelectronics |
Transil ■ Peak pulse power: – 1500 W (10/1000 μs) – 10 kW (8/20 μs) Stand off voltage range: from 5 V to 188 V Unidirectional and bidirectional types Low leakage current: – 0.2 μA at 25 °C – 1 μA at 85 °C Operating Tj max: 150 °C High power capability at Tj |
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STMicroelectronics |
NPN power transistor ■ Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Switch mode power supplies Description The device is manufactured using high voltage multi-epit |
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Huajing Microelectronics |
Silicon NPN Transistor |
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Huajing Microelectronics |
Silicon NPN Transistor |
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ST Microelectronics |
N-channel Power MOSFET TYPE STP130NS04ZB STB130NS04ZB STW130NS04ZB s s s s Figure 1: Package RDS(on) < 9 mΩ < 9 mΩ < 9 mΩ ID 80 A 80 A 80 A 3 3 1 2 VDSS CLAMPED CLAMPED CLAMPED TYPICAL RDS(on) = 7 mΩ 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175°C MAXIMUM JU |
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ST Microelectronics |
IGBT ■ ■ ■ ■ Low saturation voltage High current capability Low switching loss Low static and peak forward voltage drop freewheeling diode 2 1 3 Applications ■ ■ Induction cooking, microwave oven Soft switching application TO-247 Description This IGB |
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Huajing Microelectronics |
Silicon NPN triple diffusion type bipolar transistor PBB ≤0.1% ○ PBDE ≤0.1% ○ HBCDD ≤0.1% ○ DEHP DBP BBP ≤0.1% ○ ≤0.1% ○ ≤0.1% ○ ○ ○ ○○ ○ ○ ○ ○ ○○ ○○ ○○ ○ ○ ○ ○ ○○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ×○○○ ○ ○ ○ ○ ○○ ○： SJ/T11363-2006 。 ×： SJ/T11363-2006 。 （Pb）， RoHS 。 2012 |
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STMicroelectronics |
High voltage fast-switching NPN power transistor ■ Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Switch mode power supplies Description The device is manufactured using high voltage multi-epit |
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STMicroelectronics |
3.3V AND ADJUSTABLE VOLTAGE REGULATORS s s s s s s s s Output currents up to 750mA for STV8130A and up to 200mA for STV8130B Fixed precision output 1 voltage 3.3V ± 2% Output 2 voltage programmable from 2.8V to 16V Output 1 with reset facility Output 2 with disable by TTL input Short c |
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STMicroelectronics |
High voltage fast-switching NPN power transistor ■ STI13005-1 is opposite pin out versus standard IPAK package ■ High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed Application ■ Switch mode power supplies (AC-DC converters) IPAK 3 2 1 Description The device is |
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