| No. | Partie # | Fabricant | Description | Fiche Technique |
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Matsuki |
N-Channel 30-V(D-S) MOSFET ● RDS(ON)≦11.7mΩ@VGS=10V ● RDS(ON)≦18.2mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Battery Powered System ● DC/DC |
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Matsuki |
N- and P-Channel 30-V (D-S) MOSFET ● 30V/6.9A,RDS(ON)=25mΩ@VGS=10V (N-Ch) ● 30V/5.8A,RDS(ON)=40mΩ@VGS=4.5V (N-Ch) ● -30V/-6.1A,RDS(ON)=35mΩ@VGS=-10V (P-Ch) ● -30V/-5.1A, RDS(ON)=58mΩ@ VGS=-4.5V (P-Ch) ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistan |
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Matsuki |
N-Channel 30-V(D-S) MOSFET ● RDS(ON)≦6mΩ@VGS=10V ● RDS(ON)≦8.5mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Battery Powered System ● DC/DC Conv |
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Matsuki |
P-Channel 30-V (D-S) MOSFET ● -30V/-9.1A,RDS(ON)=20mΩ@VGS=-10V ● -30V/-6.9A,RDS(ON)=35mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable E |
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Matsuki |
Dual P-Channel MOSFET ● RDS(ON)≦60mΩ@VGS=-10V ● RDS(ON)≦90mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Pow |
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Matsuki |
Dual N-Channel MOSFET ● RDS(ON)≦16mΩ@VGS=10V ● RDS(ON)≦20mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powere |
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Matsuki |
N-Channel 30-V(D-S) MOSFET ● Integrated Schottky diode ● RDS(ON)≦13mΩ@VGS=10V ● RDS(ON)≦21.5mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Batte |
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Matsuki |
N-Channel 30-V(D-S) MOSFET ● Integrated Schottky diode ● RDS(ON)≦13mΩ@VGS=10V ● RDS(ON)≦21.5mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Batte |
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Matsuki |
P-Channel MOSFET ● RDS(ON)≦11mΩ@VGS=-10V ● RDS(ON)≦16mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● L |
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Matsuki |
Dual N-Channel MOSFET ● RDS(ON)≦16 mΩ@VGS=4.5V ● RDS(ON)≦23 mΩ@VGS=2.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Pow |
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Matsuki |
Dual N-Channel MOSFET ● RDS(ON)≦35 mΩ@VGS=10V ● RDS(ON)≦45 mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powe |
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Matsuki |
P-Channel MOSFET ● RDS(ON)≦10mΩ@VGS=-10V ● RDS(ON)≦13mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powe |
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Matsuki |
P-Channel MOSFET ● RDS(ON)≦11mΩ@VGS=-10V ● RDS(ON)≦16mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● L |
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Matsuki |
P-Channel 30-V (D-S) MOSFET ● RDS(ON)≦20mΩ@VGS=-10V ● RDS(ON)≦35mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Pow |
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Matsuki |
N-Channel 30-V (D-S) MOSFET ● RDS(ON)≦18mΩ@VGS=10V ● RDS(ON)≦20mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powere |
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Matsuki Electric |
P-Channel 30-V (D-S) MOSFET ● RDS(ON)≦14mΩ@VGS=-10V ● RDS(ON)≦19mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powe |
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Matsuki |
N-Channel 30-V(D-S) MOSFET ● RDS(ON)≦6mΩ@VGS=10V ● RDS(ON)≦8.5mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Battery Powered System ● DC/DC Conv |
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Matsuki |
N-Channel 30-V(D-S) MOSFET ● RDS(ON)≦11.7mΩ@VGS=10V ● RDS(ON)≦18.2mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Battery Powered System ● DC/DC |
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Matsuki |
N-Channel 30-V (D-S) MOSFET RDS(ON) 18 mΩ@VGS=10V RDS(ON) 30 mΩ@VGS=4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/ |
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Matsuki |
N-Channel 30-V (D-S) MOSFET RDS(ON) 18 mΩ@VGS=10V RDS(ON) 30 mΩ@VGS=4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/ |
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