No. | Partie # | Fabricant | Description | Fiche Technique |
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matrix microtech |
Dual P-Channel High Density Trench MOSFET -30V/-4.9A, RDS(ON) = 65mΩ @ VGS = -10V -30V/-3.6A, RDS(ON) = 105mΩ @ VGS = -4.5V Super high dense cell trench design for low RDS(ON) Rugged and reliable SOP-8 package design ¾ ¾ ¾ ¾ APPLICATIONS POWER Management in Note Portable Equipment Batter |
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Matrix Microtech |
P & N-Channel 60-V(D-S) MOSFET APPLICATIONS ¾ 60V/4.5A, RDS(ON) = 58mΩ @ VGS = 10V ¾ 60V/4.0A, RDS(ON) = 85mΩ @ VGS = 4.5V ¾ -60V/-3.5A, RDS(ON) = 90mΩ @ VGS = -10V ¾ -60V/-3.0A, RDS(ON) =135mΩ @ VGS = -4.5V ¾ Fast switching speed ¾ SOP-8 & TO-252 package design ¾ Power Manag |
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Matrix Microtech |
P-Channel Enhancement Mode MOSFET -30V/-8A, RDS(ON) = 20mΩ @ VGS = -10V SO-8 package design Simple Drive Requirement Low On-resistance Fast Switching ¾ ¾ ¾ ¾ ¾ APPLICATIONS POWER Management in Note Portable Equipment Battery Powered System DC/DC Converter Load Switch PIN CONF |
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Matrix Microtech |
P & N-Channel 100-V(D-S) MOSFET APPLICATIONS ¾ 100V/9.8A, RDS(ON) = 155mȍ @ VGS = 10V ¾ -100V/-9A, RDS(ON) = 160mȍ @ VGS = -10V ¾ 100V/9.8A, RDS(ON) = 175mȍ @ VGS = 4.5V ¾ -100V/-9A, RDS(ON) = 185mȍ @ VGS = -4.5V ¾ Fast switching speed ¾ SOP-8 package design ¾ Power Management |
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