| No. | Partie # | Fabricant | Description | Fiche Technique |
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Maple Semiconductor |
N-Channel MOSFET - 7.5A, 650V, RDS(on) typ. = 1.2Ω@VGS = 10 V - Low gate charge ( typical 29nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwi |
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Maple Semiconductor |
N-Channel MOSFET - 10A, 600V, RDS(on) typ. = 0.68Ω@VGS = 10 V - Low gate charge ( typical 35 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP1 |
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Maple Semiconductor |
N-Channel MOSFET - 12.0A, 600V, RDS(on)typ = 0.51Ω@VGS = 10 V - Low gate charge ( typical 44.7nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability GDS TO-220 GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise no |
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Maple Semiconductor |
N-Channel MOSFET - 20A, 650V, RDS(on) typ. = 0.16Ω@VGS = 10 V - Low gate charge ( typical 70nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherw |
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Maple Semiconductor |
N-Channel MOSFET -18A, 500V, RDS(on) typ.= 0.21Ω@VGS = 10 V - Low gate charge ( typical - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability 43nC) D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless othe |
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Maple Semiconductor |
N-Channel MOSFET - 10A, 800V, RDS(on)Typ. = 0.85Ω@VGS = 10 V - Low gate charge ( typical 63 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability - ESD Improved capability D G GDS TO-220 GDS TO-220F Absolute Maximum Ratings |
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Maple Semiconductor |
N-Channel MOSFET - 16A, 500V, RDS(on)typ. = 305mΩ@VGS = 10 V - Low gate charge ( typical 52nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwis |
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Maple Semiconductor |
N-Channel MOSFET - 5A, 650V, RDS(on) typ. = 0.85Ω@VGS = 10 V - Low gate charge ( typical 15nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise no |
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Maple Semiconductor |
N-Channel MOSFET - 4A, 650V, RDS(on)typ = 2.32Ω@VGS = 10 V - Low gate charge ( typical 10.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G Absolute Maximum Ratings TC = 25°C unless otherwise |
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Maple Semiconductor |
N-Channel MOSFET - 10A, 650V, RDS(on) typ. =0.8Ω@VGS = 10 V - Low gate charge ( typical 28.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP10 |
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Maple Semiconductor |
N-Channel MOSFET - 10A, 650V, RDS(on) typ. = 0.62Ω@VGS = 10 V - Low gate charge ( typical 35 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP1 |
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Maple Semiconductor |
N-Channel MOSFET - 11A, 400V, RDS(on)typ. = 0.53Ω@VGS = 10 V - Low gate charge ( typical 15.7nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D G GDS TO-220 GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwi |
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Maple Semiconductor |
N-Channel MOSFET - 10A, 650V, RDS(on) typ. = 0.678Ω@VGS = 10 V - Low gate charge ( typical 38nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherw |
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Maple Semiconductor |
N-Channel MOSFET - 12A, 650V, RDS(on) typ. = 0.6Ω@VGS = 10 V - Low gate charge ( typical 47nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwis |
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Maple Semiconductor |
N-Channel MOSFET - 10A, 700V, RDS(on) typ. = 0.9Ω@VGS = 10 V - Low gate charge ( typical 40nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwis |
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Maple Semiconductor |
N-Channel MOSFET - 10A, 600V, RDS(on)typ. = 0.62Ω@VGS = 10 V - Low gate charge ( typical 36.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherw |
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Maple Semiconductor |
N-Channel MOSFET - 18A, 400V, RDS(on) typ. = 0.20Ω@VGS = 10 V - Low gate charge ( typical 50nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwi |
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Maple Semiconductor |
N-Channel MOSFET - 15A, 650V, RDS(on) typ. = 0.27Ω@VGS = 10 V - Low gate charge ( typical 43nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherw |
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Maple Semiconductor |
N-Channel MOSFET - 11A, 650V, RDS(on) typ. = 0.38Ω@VGS = 10 V - Low gate charge ( typical 33nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherw |
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Maple Semiconductor |
N-Channel MOSFET - 10A, 650V, RDS(on) typ. = 0.45Ω@VGS = 10 V - Low gate charge ( typical 35nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherw |
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