| No. | Partie # | Fabricant | Description | Fiche Technique |
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MagnaChip |
Single N-Channel MOSFET |
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MagnaChip |
Single N-channel Trench MOSFET VDS = 30V ID = 47.6A @VGS = 10V RDS(ON) < 9.0 mΩ @VGS = 10V < 14.0 mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested DD DD DD DD D S SSG GS SS PowerDFN56 Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristi |
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MagnaChip |
N-Channel Trench MOSFET VDS = 30V ID = 100.0A @VGS = 10V RDS(ON) (MAX) < 3.4mΩ @VGS = 10V < 5.0mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested DD DD DD DD D S SSG GS SS PowerDFN56 Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Character |
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MagnaChip |
Single N-channel Trench MOSFET VDS = 30V ID = 100A @VGS = 10V RDS(ON) < 2.4 mΩ @VGS = 10V < 3.3 mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested D D D D D D D D D S S S G G S S S G PowerDFN56 S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Vol |
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MagnaChip |
Single N-channel Trench MOSFET VDS = 30V ID = 66.3A @VGS = 10V RDS(ON) < 6.0 mΩ @VGS = 10V < 9.0 mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested DD DD DD DD D S SSG GS SS PowerDFN56 Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Volta |
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MagnaChip |
Single N-channel Trench MOSFET VDS = 30V ID = 100.0A @VGS = 10V RDS(ON) (MAX) < 2.9mΩ @VGS = 10V < 4.4mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested DD DD DD DD D S SSG GS SS PowerDFN56 Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Character |
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MagnaChip |
N-channel MOSFET • Trench power MOSFET technology • N-channel, normal level • 100% Avalanche tested PDFN56 APPLICATIONS • BLDC Motor Inverter • Synchronous Rectification • Power Tool KEY PERFORMANCE PARAMETERS VDS 40 V RDS(on), typ. 0.0022 Ω ID 70 A QG J |
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MagnaChip |
Single N-channel Trench MOSFET VDS = 40V ID = 100A @VGS = 10V RDS(ON) < 1.4mΩ @VGS = 10V 100% UIL Tested 100% Rg Tested DD DD DD DD D S SSG GS SS PDFN56 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Dra |
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MagnaChip |
N-channel MOSFET VDS = 40V ID = 100A @VGS = 10V Very low on-resistance RDS(ON) < 1.0mΩ @VGS = 10V 100% UIL Tested 100% Rg Tested DDD D D Pin 5,6,7,8 SS SG PDFN56 G S SS Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-S |
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MagnaChip |
N-channel MOSFET • Trench power MOSFET technology • N-channel, normal level • Enhanced avalanche ruggedness • 100% Avalanche tested • Maximum 175°C junction temperature • AEC-Q101 qualified APPLICATIONS • DC/DC and AC/DC converters • Brushed and BLDC motor drive syst |
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MagnaChip |
N-channel MOSFET • Trench power MOSFET technology • N-channel, normal level • 100% Avalanche tested • Maximum 175°C junction temperature • AEC-Q101 qualified APPLICATIONS • Motor inverter • Switching applications D1 D2 PDFN56-DUAL S1 G1 S2 G2 Top View D1 Bottom V |
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MagnaChip |
N-channel MOSFET VDS = 100V ID = 53 A @VGS = 10V Very low on-resistance RDS(ON) < 7.4 mΩ @VGS = 10V < 9.1 mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested 5 8 D Pin 5,6,7,8 1 4 4 1 PDFN56 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Sourc |
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MagnaChip |
N-Channel MOSFET • Trench power MOSFET technology • N-channel, normal level • Enhanced avalanche ruggedness • 100% Avalanche tested • Maximum 175°C junction temperature • AEC-Q101 qualified APPLICATIONS • Switching applications • Brushed and BLDC Motor drive systems |
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MagnaChip |
N-Channel Trench MOSFET |
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MagnaChip |
N-Channel MOSFET VDS = 40V ID = 100A @VGS = 10V RDS(ON) < 1.0mΩ @VGS = 10V 100% UIL Tested 100% Rg Tested D D DD D D DD D S S SG GS SS PDFN56 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous |
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MagnaChip |
N-channel MOSFET and benefits • Magnachip’s MOSFET Technology • Very low on-resistance RDS(on) • 100% Avalanche / Rg Tested Applications • Switching Applications Key performance parameters VDS RDS(on), max ID QG Junction temperature, max 40 V 0.007 Ω 77 A 33 |
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MagnaChip |
N-Channel Trench MOSFET VDS = 30V ID = 57.4A @VGS = 10V RDS(ON) < 7.2 mΩ @VGS = 10V < 11.0 mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested D D DD D D DD D SS SG GSS S PowerDFN56 Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Vo |
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MagnaChip |
N-Channel MOSFET VDS = 30V ID = 32A @VGS = 10V RDS(ON) < 8.0 mΩ @VGS = 10V < 10.5 mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested DD DD DD DD D S SSG GS SS G PDFN56 Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Charac |
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MagnaChip |
N-Channel MOSFET VDS = 30V ID = 64A @VGS = 10V RDS(ON) < 2.4 mΩ @VGS = 10V < 3.3 mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested DD DD DD DD D S SSG GS SS G PDFN56 Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characte |
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MagnaChip |
N-channel MOSFET The MDU1722VRH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1722VRH is suitable device for Synchronous Rectification For Server and general |
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