| No. | Partie # | Fabricant | Description | Fiche Technique |
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MagnaChip |
N-channel MOSFET and benefits • Magnachip’s MOSFET technology • Very low on-resistance RDS(on) • 100% Avalanche / Rg / △VDS Tested Applications • Motor Inverter • Battery Management • Power Inverter Key performance parameters VDS 80 V RDS(on), max 0.0017 Ω I |
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MagnaChip |
N-channel MOSFET • Trench power MOSFET technology • N-channel, normal level • Enhanced avalanche ruggedness • 100% Avalanche tested • Maximum 175°C junction temperature APPLICATIONS • DC/DC and AC/DC converters • Brushed and BLDC Motor drive systems • Load switch K |
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MagnaChip |
N-channel MOSFET and benefits • Magnachip’s MOSFET Technology • Very low on-resistance RDS(on) • 100% Avalanche / Rg / △VDS Tested Applications • Motor Inverter • Battery Management • Power Inverter Key performance parameters VDS 135 V RDS(on), max ID QG Junctio |
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MagnaChip |
N-channel MOSFET • MV MOSFET GEN3T technology • N-channel, normal level • Enhanced avalanche ruggedness • 100% UIS and Rg tested • Maximum 175°C junction temperature APPLICATIONS • DC/DC and AC/DC converters • Brushed and BLDC Motor drive systems • Battery powered s |
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MagnaChip |
N-channel MOSFET and benefits • Magnachip’s MOSFET Technology • Very low on-resistance RDS(on) • 100% Avalanche / Rg Tested Applications • Motor Inverter • Battery Management • Power Inverter Key performance parameters VDS 100 V RDS(on), max 0.0023 Ω ID 300 |
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